Paper
17 December 2003 Optimization of a 65-nm alternating phase-shift quartz etch process
Author Affiliations +
Abstract
As mask features advance to the 65 nm technology node, the ability to develop advanced phase shifting masks with reliable and repeatable processes is becoming increasingly important. Changes in process conditions (i.e. power, pressure, gases, etc.), play an important role in the reduction of RIE lag, micro-trenching, loading and the improvement of sidewall profiles. In this study, the effects of changing process conditions on the TetraTM II Photomask Etch System were investigated. Process development was conducted to screen for a quartz etch process regime with enhanced performance.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott A. Anderson, Rex B. Anderson III, Melisa J. Buie, Madhavi Chandrachood, Jason O. Clevenger, Yvette Lee, Nicole L. Sandlin, and Jian Ding "Optimization of a 65-nm alternating phase-shift quartz etch process", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518231
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Cited by 5 scholarly publications.
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KEYWORDS
Etching

Reactive ion etching

Photomasks

Ions

Quartz

Phase measurement

Plasma

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