Quartz etch solutions for 45-nm phase-shift masks

M. Chandrachood; M. Grimbergen; T. Y. B. Leung; S. Panayil; I. Ibrahim; A. Kumar

doi:10.1117/12.687572

20 October 2006 Quartz etch solutions for 45-nm phase-shift masks

M. Chandrachood, M. Grimbergen, T. Y. B. Leung, S. Panayil, I. Ibrahim, A. Kumar

Proceedings Volume 6349, Photomask Technology 2006; 634934 (2006) https://doi.org/10.1117/12.687572
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

One means of extending the limits and lifetime of current lithography platforms for 45nm and beyond is the development of resolution enhancement techniques (RET) in the form of optical phase-shifting masks (PSM). By employing optical interference from 180° shifted lithography emission, PSM masks are able to enhance feature resolution at the wafer. This is particularly important for sub-wavelength features (i.e., features with critical dimensions less than the lithography wavelength) where line resolution can be severely degraded without such techniques. For these PSMs, the challenge is to provide highly uniform quartz etch performance across the entire active area of the mask for various feature sizes and local loads. Micro-loading (a.k.a. RIE lag or reactive ion etch lag) and phase angle range are key performance parameters to control. As the demands for these parameters tighten and mask costs rise, strict performance control is required for all PSM mask varieties utilized in the mask shop. In this paper we will discuss process results using Applied Materials next generation mask etch system in the area of APSM etch application. In particular, the discussion will focus on recent process results in phase uniformity and RIE lag for Quartz etch process. Feature profiles are also discussed with examples showing near vertical sidewalls and no micro-trenching.

Citation Download Citation

M. Chandrachood, M. Grimbergen, T. Y. B. Leung, S. Panayil, I. Ibrahim, and A. Kumar "Quartz etch solutions for 45-nm phase-shift masks", Proc. SPIE 6349, Photomask Technology 2006, 634934 (20 October 2006); https://doi.org/10.1117/12.687572

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