Paper
9 July 2004 Experimental study of infrared thermal emission from periodic microcavities
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Abstract
In this paper we present a study of infrared spectral thermal emission from varius grating structures. The structures include various lamellar grating layers of metals, silicon or GaAs on the same semiconductor substrate. The gratings have different periods, groove widths and groove depths, with feature sizes comparable to the radiated measurement wavelengths (2.5 - 25 μm). The measurement temperatures for all samples were in the range 27 to 740°K. Lateral and vertical optical confinement in the grating layers can occur. In the semiconductor grating layer in the case where the material is partially transparent lateral optical coupling exist which affect the spectral emission. In addition vertical confinement of the electromagnetic field exists which corresponds to "organ-pipe" like modes. The vertical confinement is enhanced in the case where the grating scructure is coated with metal or degenerate semiconductor. These phenomena resulted in thermal emission spectral oscillation for the wavelength range larger than the grating period.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathan Pinhas, Mark Auselender, Shlomo Hava, and Ari Cohen-Nov "Experimental study of infrared thermal emission from periodic microcavities", Proc. SPIE 5360, Photonic Crystal Materials and Devices II, (9 July 2004); https://doi.org/10.1117/12.527939
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KEYWORDS
Gallium arsenide

Silicon

Infrared radiation

Metals

Thermography

Semiconductors

Semiconducting wafers

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