Paper
14 May 2004 Elimination of photoresist linewidth slimming by fluorination
Author Affiliations +
Abstract
Typically resist performance has lagged behind exposure tools as new, shorter wavelengths are introduced in the never-ending industry quest to print smaller features. Over time, however, the performance improves until it matches or exceeds that of the resists used in the previous wavelength node; 193 nm resists have not been the exception. Their resolution and stability has improved but one issue that remains is linewidth slimming. This phenomenon consists in a reduction of resist features when they are exposed to an electron beam in an scanning electron microscope during linewidth metrology. Although this phenomenon has been well described and reasonably well understood, no solution exists to eliminate this problem. In this paper we show linewidth slimming can be significantly reduced by fluorinating the resist after the relief image has been developed, keeping the lithographic dimensions unchanged.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cesar M. Garza and Willard E. Conley "Elimination of photoresist linewidth slimming by fluorination", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533331
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KEYWORDS
Photoresist materials

Fluorine

Scanning electron microscopy

Photoresist processing

Hydrogen

Ions

Lithography

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