Paper
28 May 2004 Characterization of next-generation bake plate requirements for 193-nm lithography tools
Phong T. Do, Ann Kang, Joseph Pender, Thomas Lehmann, Leo McArdle, Farhat Quli, James Pascale
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Abstract
In this study, we have characterized a bake process for a 193nm poly process. We used a wafer dynamic sensor plate, which uses embedded thin film platinum RTDs (resistance temperature detector) from SensArray to capture temperature information across the hot plate and throughout the baking process. Our goal is to see whether we can use current hot plates and bake processes to meet the requirements set by the International Technology Roadmap for Semiconductor (ITRS). Two different types of hot plates from Tokyo Electron are being evaluated, LHP (low temperature hot plate) and PCH (precision chill plate).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Phong T. Do, Ann Kang, Joseph Pender, Thomas Lehmann, Leo McArdle, Farhat Quli, and James Pascale "Characterization of next-generation bake plate requirements for 193-nm lithography tools", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537592
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KEYWORDS
Semiconducting wafers

Sensors

Temperature metrology

Critical dimension metrology

Lithography

Photoresist processing

Platinum

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