Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography

V. P. Makhniy; Ya. M. Barasyuk; M. V. Demych; Ye. V. Stets; O. I. Yanchuk

doi:10.1117/12.559761

4 June 2004 Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography

V. P. Makhniy, Ya. M. Barasyuk, M. V. Demych, Ye. V. Stets, O. I. Yanchuk

Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.559761
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine

Abstract

The basic photo-electric properties of contacts of oxide semiconductor (In₂O₃, SnO₂, ITO) with cadmium telluride and with indium selenide are analyzed from the point of view of their use as photodetectors for an optical tomography.

Citation Download Citation

V. P. Makhniy, Ya. M. Barasyuk, M. V. Demych, Ye. V. Stets, and O. I. Yanchuk "Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); https://doi.org/10.1117/12.559761

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