Numerical and experimental study of oxide growth on EUV mask capping layers

Eric P. Cotte; Christian Holfeld; Uwe Dersch; Guenther Ruhl; Jan Perlich

doi:10.1117/12.569276

6 December 2004 Numerical and experimental study of oxide growth on EUV mask capping layers

Eric P. Cotte, Christian Holfeld, Uwe Dersch, Guenther Ruhl, Jan Perlich

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569276
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

The interface roughness of EUV mask multilayers was taken into account for the numerical calculation of blank reflectance, and models for the growth of oxide on Si capping layers were proposed and evaluated. The simulations were then checked and validated with reflectometry measurements at different steps of the mask blank processing as well as for various angles of incidence, and ellipsometry data on layer thickness. The benchmarked models made it possible to characterize EUV mask blank Mo/Si multilayers (period, thickness ratio, number of bilayers), as well as Si capping layers and native oxide layers from reflectivity measurements. This enabled the study, via a combination of experiments and simulations, of the growth of SiO2 layers, bringing deeper understanding into this phenomenon. Finally, the simulations were used to more properly optimize multilayers and quantify the influence of the exposure tool illumination numerical aperture. Having successfully matched reflectivity data around the actinic wavelength, it was also possible to extend the models to inspection wavelengths in order to predict inspection contrast values.

Citation Download Citation

Eric P. Cotte, Christian Holfeld, Uwe Dersch, Guenther Ruhl, and Jan Perlich "Numerical and experimental study of oxide growth on EUV mask capping layers", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569276

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