Mask technology for EUV lithography

M. Bujak; Scott C. Burkhart; Charles J. Cerjan; Patrick A. Kearney; Craig E. Moore; Shon T. Prisbrey; Donald W. Sweeney; William M. Tong; Stephen P. Vernon; Christopher C. Walton; Abbie L. Warrick; Frank J. Weber; Marco Wedowski; Karl Child Wilhelmsen; Jeffrey Bokor; Sungho Jeong; Gregory Frank Cardinale; Avijit K. Ray-Chaudhuri; Alan R. Stivers; Edita Tejnil; Pei-yang Yan; Scott Daniel Hector; Khanh B. Nguyen

doi:10.1117/12.346225

23 April 1999 Mask technology for EUV lithography

M. Bujak, Scott C. Burkhart, Charles J. Cerjan, Patrick A. Kearney, Craig E. Moore, Shon T. Prisbrey, Donald W. Sweeney, William M. Tong, Stephen P. Vernon, Christopher C. Walton, Abbie L. Warrick, Frank J. Weber, Marco Wedowski, Karl Child Wilhelmsen, Jeffrey Bokor, Sungho Jeong, Gregory Frank Cardinale, Avijit K. Ray-Chaudhuri, Alan R. Stivers, Edita Tejnil, Pei-yang Yan, Scott Daniel Hector, Khanh B. Nguyen

Author Affiliations +

Proceedings Volume 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98; (1999) https://doi.org/10.1117/12.346225
Event: 15th European Conference on Mask Technology for Integrated Circuits and Micro-Components, 1998, Munich, Germany

Abstract

Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

Citation Download Citation

M. Bujak, Scott C. Burkhart, Charles J. Cerjan, Patrick A. Kearney, Craig E. Moore, Shon T. Prisbrey, Donald W. Sweeney, William M. Tong, Stephen P. Vernon, Christopher C. Walton, Abbie L. Warrick, Frank J. Weber, Marco Wedowski, Karl Child Wilhelmsen, Jeffrey Bokor, Sungho Jeong, Gregory Frank Cardinale, Avijit K. Ray-Chaudhuri, Alan R. Stivers, Edita Tejnil, Pei-yang Yan, Scott Daniel Hector, and Khanh B. Nguyen "Mask technology for EUV lithography", Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); https://doi.org/10.1117/12.346225

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