Long-wavelength VCSEL devices on GaAs substrates

Jim-Young Chi; Hung-Pin D. Yang; Chen-Ming Lu; Ru-Shang Hsiao; Chih-Hung Chiou; Cheng-Hung Lee; Chun-Yuan Huang; Hsin-Chieh Yu; Chin-May Wang; Kuen-Fong Lin; Chih-Ming Lai; Li-Chung Wei; Nikolai A. Maleev; Alexey R. Kovsh; Chia-Pin Sung; Jyh-Shyang Wang; Jenn-Fang Chen; Tsin-Dong Lee

doi:10.1117/12.581108

31 January 2005 Long-wavelength VCSEL devices on GaAs substrates

Jim-Young Chi, Hung-Pin D. Yang, Chen-Ming Lu, Ru-Shang Hsiao, Chih-Hung Chiou, Cheng-Hung Lee, Chun-Yuan Huang, Hsin-Chieh Yu, Chin-May Wang, Kuen-Fong Lin, Chih-Ming Lai, Li-Chung Wei, Nikolai A. Maleev, Alexey R. Kovsh, Chia-Pin Sung, Jyh-Shyang Wang, Jenn-Fang Chen, Tsin-Dong Lee

Author Affiliations +

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.581108
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Two approaches to realize the VCSEL devices based on GaAs substrates are investigated. The first approach utilizes InGaAs quantum wells with dilute nitride to extend the bandgap toward long wavelenegth. The second approach utilizes InAs/InGaAs quantum dots based on Stranski and Krastanov growth mode with confinement and strain combined to adjust the bandgap to 1.3 μm wavelength. High quality epitaxial layers with low threshold have been achieved with MBE and MOCVD. VCSEL performances that have been achieved are: Multimode operation at 1.303 μm with slope efficiency of 0.15 W/A (0.2 W/A), and maximum power of 1 mW (4 mW) for room temperature CW (pulse) operation have been achieved with MBE-grown In GaAaN active regions. Room temperature, CW single mode operation with SMSR > 40 dB at 1.303 μm has also been achieved with a slope efficiency of 0.17 W/A and maximum power of 0.75 mW also with MBE-grown InGaAaN active regions. In addition, MOCVD grown has also achieved a performance at 1.29 μm with slope efficiency, 0.066 W/A, and maximum power, 0.55 mW. VCSELs with 9 layers of quantum dots and all-semiconductor DBRs also achieved lasing at 1.3 μm.

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Jim-Young Chi, Hung-Pin D. Yang, Chen-Ming Lu, Ru-Shang Hsiao, Chih-Hung Chiou, Cheng-Hung Lee, Chun-Yuan Huang, Hsin-Chieh Yu, Chin-May Wang, Kuen-Fong Lin, Chih-Ming Lai, Li-Chung Wei, Nikolai A. Maleev, Alexey R. Kovsh, Chia-Pin Sung, Jyh-Shyang Wang, Jenn-Fang Chen, and Tsin-Dong Lee "Long-wavelength VCSEL devices on GaAs substrates", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.581108

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KEYWORDS

Vertical cavity surface emitting lasers

Gallium arsenide

Quantum wells

Metalorganic chemical vapor deposition

Indium gallium arsenide

Near field optics

Continuous wave operation

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