XCEED: XTREME commercial EUV exposure diagnostic experiment

Erik L. Antonsen; Keith C. Thompson; Matthew R. Hendricks; Darren A. Alman; Brian E. Jurczyk; David N. Ruzic; Tran Duc Chinh; Ginger Edwards; Stefan Wurm; Obert Wood; Robert Bristol

doi:10.1117/12.599799

6 May 2005 XCEED: XTREME commercial EUV exposure diagnostic experiment

Erik L. Antonsen, Keith C. Thompson, Matthew R. Hendricks, Darren A. Alman, Brian E. Jurczyk, David N. Ruzic, Tran Duc Chinh, Ginger Edwards, Stefan Wurm, Obert Wood, Robert Bristol

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.599799
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The XCEED chamber was designed to allow diagnostic access to the conditions experienced by collecting optics for a discharge produced plasma (DPP) source. The chamber provides access for EUV photodiodes, sample exposure tests, Faraday cup measurements, and characterization of the ion debris field by a spherical sector energy analyzer (ESA). The Extreme Ultraviolet (EUV) light source creates a xenon z-pinch for the generation of 13.5 nm light. Typical EUV emission is characterized though a control photodiode. The chamber also allows characterization of optic samples at varying exposure times for normal and grazing incidence reflection angles during tests lasting up to 40 million pulses. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z-pinch is followed by ejection of multiply-charged ions which can significantly damage nearby mirror surfaces. Characterization of the ejecta is performed with an ESA that diagnoses fast ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ITOF-ESA is used to characterize both the energy and angular distribution of the debris field. In the current paper, the ESA is applied only to the ion debris emitted from the source. The effects of total particle flux on mirror samples are investigated through exposure testing. Samples are exposed to the source plasma and surface metrology is performed to analyze erosion and deposition effects on mirrors within the source chamber.

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Erik L. Antonsen, Keith C. Thompson, Matthew R. Hendricks, Darren A. Alman, Brian E. Jurczyk, David N. Ruzic, Tran Duc Chinh, Ginger Edwards, Stefan Wurm, Obert Wood, and Robert Bristol "XCEED: XTREME commercial EUV exposure diagnostic experiment", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.599799

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