THz quantum semiconductor devices

H.C. Liu; H. Luo; D. Ban; M. Wächter; C. Y. Song; Z. R. Wasilewski; M. Buchanan; G. C. Aers; A. J. SpringThorpe; J. C. Cao; S. L. Feng; B. S. Williams; Q. Hu

doi:10.1117/12.667658

23 January 2006 THz quantum semiconductor devices

H.C. Liu, H. Luo, D. Ban, M. Wächter, C. Y. Song, Z. R. Wasilewski, M. Buchanan, G. C. Aers, A. J. SpringThorpe, J. C. Cao, S. L. Feng, B. S. Williams, Q. Hu

Author Affiliations +

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 602901 (2006) https://doi.org/10.1117/12.667658
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Terahertz (1 - 10 THz) quantum-well photodetectors and quantum- cascade lasers have been investigated. The design and projected detector performance are presented together with experimental results on several test devices, all working at photon energies below the optical phonons. Background limited infrared performance (BLIP) operations were observed for all samples (three in total) designed for different wavelengths. For lasers, a set of THz quantumcascade lasers with identical device parameters except for the doping concentration has been studied. The δ-doping density for each period was varied from 3.2 × 10¹⁰ to 4.8 × 10¹⁰ cm^-2. We observed that the lasing threshold current increased monotonically with doping. Moreover, the measured results on devices with different cavity lengths provided evidence that the free carrier absorption caused waveguide loss also increased monotonically. Interestingly however, the observed maximum lasing temperature displayed an optimum at a doping density of 3.6 × 10¹⁰ cm^-2.

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H.C. Liu, H. Luo, D. Ban, M. Wächter, C. Y. Song, Z. R. Wasilewski, M. Buchanan, G. C. Aers, A. J. SpringThorpe, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu "THz quantum semiconductor devices", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602901 (23 January 2006); https://doi.org/10.1117/12.667658

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