Dissolution fundamentals of 193-nm methacrylate-based photoresists

Ashwin Rao; Shuhui Kang; Bryan D. Vogt; Vivek M. Prabhu; Eric K. Lin; Wen-Li Wu; Karen Turnquest; William D. Hinsberg

doi:10.1117/12.656540

29 March 2006 Dissolution fundamentals of 193-nm methacrylate based photoresists

Ashwin Rao, Shuhui Kang, Bryan D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, William D. Hinsberg

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615310 (2006) https://doi.org/10.1117/12.656540
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, measurements of the dissolution behavior may provide needed insights towards improving line-edge roughness. We have studied the dissolution behavior of a model 193-nm photoresist, poly (methyladamantyl methacrylate), as a function of deprotection extent and developer strength. The kinetics of the dissolution process is followed using the quartz crystal microbalance technique. These photoresist films exhibit strong swelling without dissolution over a significant range of deprotection levels. At larger extents of deprotection, we observe a combination of swelling with dissolution. Additionally, we find that the degree of film swelling decreases with tetramethylammonium hydroxide developer concentration. These studies provide the insight needed to better understand the fundamentals of the dissolution of the photoresist - a key step in lithographic process.

Citation Download Citation

Ashwin Rao, Shuhui Kang, Bryan D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, and William D. Hinsberg "Dissolution fundamentals of 193-nm methacrylate based photoresists", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615310 (29 March 2006); https://doi.org/10.1117/12.656540

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