Paper
17 May 2006 Integrated infrared detectors and readout circuits
John W. Cairns, Louise Buckle, Graham J Pryce, Janet E. Hails, Jean Giess, Mark A. Crouch, David J. Hall, Alan Hydes, Andrew Graham, Andrew J. Wright, Colin J. Hollier, David J. Lees, Neil T. Gordon, Timothy Ashley
Author Affiliations +
Abstract
The standard process for manufacturing mercury cadmium telluride (MCT) infrared focal plane arrays (FPAs) involves hybridising detectors onto a readout integrated circuit (ROIC). Wafer scale processing is used to fabricate both the detector arrays and the ROICs. The detectors are usually made by growing epitaxial MCT on to a suitable substrate, which is then diced and hybridised on to the ROIC. It is this hybridisation process that prevents true wafer scale production; if the MCT could be grown directly onto the ROIC, then wafer scale production of infrared FPAs could be achieved. In order to achieve this, a ROIC compatible with the growth process needs to be designed and fabricated and the growth and processing procedures modified to ensure survival of the ROIC. Medium waveband IR detector test structures have been fabricated with resistance area product of around 3x104 Ω cm2 at 77K. This is background limited in f/2 and demonstrates that wafer scale production is achievable.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John W. Cairns, Louise Buckle, Graham J Pryce, Janet E. Hails, Jean Giess, Mark A. Crouch, David J. Hall, Alan Hydes, Andrew Graham, Andrew J. Wright, Colin J. Hollier, David J. Lees, Neil T. Gordon, and Timothy Ashley "Integrated infrared detectors and readout circuits", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620614 (17 May 2006); https://doi.org/10.1117/12.674017
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Cited by 6 scholarly publications.
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KEYWORDS
Readout integrated circuits

Sensors

Silicon

Semiconducting wafers

Infrared detectors

Staring arrays

Infrared radiation

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