Paper
20 October 2006 Inverse lithography technology at low k1: placement and accuracy of assist features
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Abstract
An implementation of inverse lithography technology is studied with special attention to illustrating and analyzing the placement, accuracy, and efficacy of subresolution assist elements. One-dimensional placement through pitch is characterized, and 2D capability is demonstrated for repeated patterns. Differences between the methods of mask preparation afforded by this system as compared to current practices are described.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Moore, Timothy Lin, Yong Liu, Gordon Russell, Linyong Pang, and Daniel Abrams "Inverse lithography technology at low k1: placement and accuracy of assist features", Proc. SPIE 6349, Photomask Technology 2006, 63494T (20 October 2006); https://doi.org/10.1117/12.693039
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

SRAF

Lithography

Semiconductors

Computer simulations

Manufacturing

Phase shifts

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