PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Mg-doped AlxGa1-xN is grown by metal-organic chemical vapor deposition to investigate the Ohmic characteristics of Pt and Ni/Au. The Al solid composition measured by x-ray varies from 0.04 to 0.19, while the atomic concentration of Mg confirmed by secondary ion mass spectroscopy spans from 3x1019 to 1x1020 cm-3. The Ohmic characteristics are measured by current-voltage by varying the Mg activation temperature, Ohmic metal annealing temperature, and annealing time. The specific contact resistance is 3.5 and 7.5x10-5 Ω cm2.with Pt and Ni/Au in p-Al0.085Ga0.915N and p-Al0.14Ga0.86N measured by circular transmission line model, respectively. These are the lowest ever reported in p-AlGaN.
Hoki Kwon,Bong Koo Kim,Gyong Geun Park,Sung Woo Kim,Jaewan Choi,Jeong Soo Lee, andWeon G Jeong
"Ohmic characteristics of Pt and Ni/Au on Mg-doped AlxGa1-xN", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550J (28 September 2006); https://doi.org/10.1117/12.689268
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Hoki Kwon, Bong Koo Kim, Gyong Geun Park, Sung Woo Kim, Jaewan Choi, Jeong Soo Lee, Weon G Jeong, "Ohmic characteristics of Pt and Ni/Au on Mg-doped AlxGa1-xN," Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550J (28 September 2006); https://doi.org/10.1117/12.689268