Paper
14 February 2007 Modeling mid-infrared continuous-wave silicon-based Raman lasers
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Abstract
We present the first modeling results for the Stokes and anti-Stokes output of a mid-infrared continuous-wave silicon-based Raman laser. These emission characteristics are generated by the use of an iterative resonator model, the loss terms of which we adapted for the case of silicon-based Raman lasers operating in the mid-infrared spectral domain. These loss terms contain besides linear losses also the three-photon absorption losses that occur in this type of lasers. We discuss the behavior of this three-photon absorption mechanism and its influence on both the Stokes and anti-Stokes output. Finally, we compare these emission characteristics with the corresponding simulation results for a near-infrared silicon-based Raman laser in which linear losses, two-photon absorption losses and free carrier absorption losses occur.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathalie Vermeulen, Christof Debaes, and Hugo Thienpont "Modeling mid-infrared continuous-wave silicon-based Raman lasers", Proc. SPIE 6455, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI, 64550U (14 February 2007); https://doi.org/10.1117/12.698488
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Cited by 8 scholarly publications.
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KEYWORDS
Absorption

Raman spectroscopy

Silicon

Semiconductor lasers

Mid-IR

Laser resonators

Continuous wave operation

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