Paper
7 February 2007 Optimization of GaAs PIN diodes for neutron detection
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Abstract
GaAs-based PIN detectors with mesa sizes 1, 2.5, 5, 7.5 and 10 mm were fabricated and characterized for alpha particle response using a Po-210 alpha source. By decoupling the neutron conversion process of a proximity moderator, we were able to directly probe the alpha response characteristics of the PIN detectors as a function of device area. Dark current levels in the PIN detectors ranged from 6.1 to 9.5 pA at zero bias. The dark current values were higher for larger devices and a linear relationship between mesa size and dark current was observed. The PIN detectors were found to have a strong alpha response of up to 5 nA/mm2 with a linear relation between the response current and mesa area. The measured responsivity of the detectors was 0.014 A/W. The average device efficiency was determined to be 31.5%. Using the measured alpha response properties of the GaAs PIN diodes one is able to select the optimal device area for a given moderator and application specific neutron flux.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Thompson, J. W. Mares, H. Seigneur, and W. V. Schoenfeld "Optimization of GaAs PIN diodes for neutron detection", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680P (7 February 2007); https://doi.org/10.1117/12.699528
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Particles

Gallium arsenide

PIN photodiodes

Ions

Lithium

Atmospheric particles

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