Prof. Winston V. Schoenfeld Profile

Prof. Winston V. Schoenfeld

Associate Professor of Optics at CREOL The College of Optics and Photonics

SPIE Involvement:

Conference Program Committee | Track Chair | Author | Editor

Publications (21)

Proceedings Article | 16 March 2023 Presentation

Tin/gallium oxide alloying probed using X-ray microanalysis and cathodoluminescence (Conference Presentation)

Daniel Hunter, Naresh-Kumar Gunasekar, Paul Edwards, Fabien Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston Schoenfeld, Robert Martin

Proceedings Volume PC12422, PC124220C (2023) https://doi.org/10.1117/12.2655959

KEYWORDS: Tin, X-rays, Oxides, Ultraviolet radiation, Transmittance, Spectroscopes, Silicon, Sapphire, Ranging, Patterned sapphire substrate

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Proceedings Article | 23 February 2018 Paper

Tin-gallium-oxide-based UV-C detectors

Partha Mukhopadhyay, Mykyta Toporkov, Winston Schoenfeld

Proceedings Volume 10533, 105330V (2018) https://doi.org/10.1117/12.2302729

KEYWORDS: Tin, Sensors, Gallium, Oxides, Thin films, Thin film devices, UV optics, Crystals

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Proceedings Article | 24 February 2017 Paper

Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film

Fikadu Alema, Brian Hertog, Andrei Osinsky, Partha Mukhopadhyay, Mykyta Toporkov, Winston Schoenfeld, Elaheh Ahmadi, James Speck

Proceedings Volume 10105, 101051M (2017) https://doi.org/10.1117/12.2260824

KEYWORDS: Photodiodes, Thin films, Diodes, Metalorganic chemical vapor deposition, Germanium, Photodetectors, Oxygen, Silicon carbide, Ultraviolet radiation, Missiles, Quantum efficiency, External quantum efficiency, Tin, Temperature metrology

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Proceedings Article | 24 February 2017 Paper

MgZnO grown by molecular beam epitaxy on N-Type B-Ga2O3 for UV Schottky barrier solar-blind photodetectors

Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali, Valeria Beletsky, Fikadu Alema, Andrei Osinsky, Winston Schoenfeld

Proceedings Volume 10105, 101051N (2017) https://doi.org/10.1117/12.2254937

KEYWORDS: Photodetectors, Thin films, Platinum, Zinc oxide, Crystals, Electrodes, Aluminum nitride, Laser crystals, Thin film growth, Molecular beam epitaxy, Ultraviolet radiation, Transmission electron microscopy, Surface roughness, Atomic force microscopy, Sapphire, Diodes

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Proceedings Article | 26 September 2016 Presentation + Paper

Detecting loss mechanisms of c-Si PV modules in-situ I-V measurement

Siyu Guo, Eric Schneller, Joe Walters, Kristopher Davis, Winston Schoenfeld

Proceedings Volume 9938, 99380N (2016) https://doi.org/10.1117/12.2236939

KEYWORDS: Solar cells, Resistance, Photovoltaics, Reliability, Circuit switching, Laser marking, Solar energy, Algorithm development, Silicon, Semiconducting wafers

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Proceedings Article | 27 February 2016 Paper

High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Fikadu Alema, Oleg Ledyaev, Ross Miller, Valeria Beletsky, Brian Hertog, Andrei Osinsky, Winston Schoenfeld

Proceedings Volume 9749, 97490Y (2016) https://doi.org/10.1117/12.2217139

KEYWORDS: Magnesium, Zinc oxide, Thin films, Atomic force microscopy, Vapor phase epitaxy, Chemical vapor deposition, Metalorganic chemical vapor deposition, Transmittance, Spectroscopy, Crystals, Photodetectors, Aluminum nitride, Absorption, Interfaces, Sapphire

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Proceedings Article | 8 October 2014 Paper

A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

Kristopher Davis, Joseph Walters, Eric Schneller, Hubert Seigneur, R. Paul Brooker, Giuseppe Scardera, Marianne Rodgers, Nahid Mohajeri, Narendra Shiradkar, Neelkanth Dhere, John Wohlgemuth, Andrew Rudack, Winston Schoenfeld

Proceedings Volume 9179, 91790Y (2014) https://doi.org/10.1117/12.2063781

KEYWORDS: Manufacturing, Reliability, Metrology, Silicon, Semiconducting wafers, Photovoltaics, Crystals, Solar cells, Diodes, Silicon solar cells

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Proceedings Article | 8 March 2014 Paper

High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy

Winston Schoenfeld, Ming Wei, R. Casey Boutwell, Huiyong Liu

Proceedings Volume 8987, 89871P (2014) https://doi.org/10.1117/12.2045555

KEYWORDS: Magnesium, Sensors, Plasma, Zinc oxide, Oxygen, Photodetectors, Sapphire, Zinc, Molecular beam epitaxy, Thin films

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Proceedings Article | 18 March 2013 Paper

Impact of growth conditions on ZnO homoepitaxial films on ZnO substrates by plasma-assisted molecular beam epitaxy

Ming Wei, R. Casey Boutwell, Winston Schoenfeld

Proceedings Volume 8626, 86261Q (2013) https://doi.org/10.1117/12.2004873

KEYWORDS: Zinc oxide, Oxygen, Zinc, Etching, Molecular beam epitaxy, Picosecond phenomena, Luminescence, Plasma, Temperature metrology, Contamination

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Proceedings Article | 19 August 2010 Paper

Cladding index engineering of the photonic properties of single-mode photonic crystal devices

M. Weed, H. Seigneur, W. Schoenfeld

Proceedings Volume 7764, 776403 (2010) https://doi.org/10.1117/12.860267

KEYWORDS: Polarization, Cladding, Photonic crystals, Crystals, Photonic crystal devices, Finite-difference time-domain method, Waveguides, Quantum information, Dispersion, Photon polarization

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Proceedings Article | 19 April 2010 Paper

Cubic ZnxMg1-xO and NiyMg1-yO thin films grown by molecular beam epitaxy for deep-UV optoelectronic applications

J. W. Mares, C. R. Boutwell, A. Scheurer, W. Schoenfeld

Proceedings Volume 7700, 77000L (2010) https://doi.org/10.1117/12.853209

KEYWORDS: Zinc, Deep ultraviolet, Thin films, Sensors, Nickel, Oxides, Magnesium, Molecular beam epitaxy, Thin film growth, Optoelectronics

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Proceedings Article | 16 February 2010 Paper

Critical nanofabrication parameters for the e-beam assisted design of a subwavelength aluminum mesh

Clarisse Mazuir, Winston Schoenfeld

Proceedings Volume 7591, 759107 (2010) https://doi.org/10.1117/12.840546

KEYWORDS: Aluminum, Transmittance, Gallium nitride, Metals, Finite-difference time-domain method, Ultraviolet radiation, Silica, Gold, Photodetectors, Absorption

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Proceedings Article | 15 February 2010 Paper

Cubic ZnxMg1-xO and NixMg1-xO thin films grown by molecular beam epitaxy for deep-UV optoelectronic applications

J. Mares, C. Boutwell, A. Scheurer, M. Falanga, W. Schoenfeld

Proceedings Volume 7603, 76031B (2010) https://doi.org/10.1117/12.841327

KEYWORDS: Zinc, Nickel, Magnesium, Absorption, Deep ultraviolet, Atomic force microscopy, Thin films, Oxides, Transmittance, Thin film growth

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Proceedings Article | 24 February 2009 Paper

E-beam assisted fabrication of a subwavelength aluminum mesh

Clarisse Mazuir, J. Thomas Deng, Jim C. M. Hwang, Winston Schoenfeld

Proceedings Volume 7205, 72050R (2009) https://doi.org/10.1117/12.809833

KEYWORDS: Aluminum, Metals, Photoresist materials, Polymethylmethacrylate, Scanning electron microscopy, Chromium, Etching, Sapphire, Oxides, Ultrasonics

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Proceedings Article | 16 February 2009 Paper

Optimization of complete band gaps for photonic crystal slabs through use of symmetry breaking hole shapes

Matthew Weed, Hubert Seigneur, Winston Schoenfeld

Proceedings Volume 7223, 72230Q (2009) https://doi.org/10.1117/12.809023

KEYWORDS: Cladding, Photonic crystals, Gallium arsenide, Polarization, Crystals, Refractive index, Photonic crystal devices, Single photon, Etching, Transmittance

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Proceedings Article | 25 August 2008 Paper

Modeling standard techniques to improve core/multishell nanowire light emitting diodes efficiencies

Clarisse Mazuir, Winston Schoenfeld

Proceedings Volume 7056, 70560X (2008) https://doi.org/10.1117/12.794979

KEYWORDS: Light emitting diodes, Curium, Indium gallium nitride, Resistance, Instrument modeling, Quantum efficiency, Steiner quadruple pulse system, Gallium nitride, Ray tracing, Nanowires

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Proceedings Article | 23 April 2008 Paper

Active components in photonic integrated circuits using electron spins in quantum dots

Amy Thompson, Hubert Seigneur, Michael Leuenberger, Winston Schoenfeld

Proceedings Volume 6988, 69880H (2008) https://doi.org/10.1117/12.781286

KEYWORDS: Quantum dots, Dielectric polarization, Polarization, Photonic integrated circuits, Refractive index, Surface plasmons, Modulation, Multiplexing, Sensors, Plasmons

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Proceedings Article | 29 January 2008 Paper

Design of single-photon Mach-Zehnder interferometer based devices for quantum information processing

Hubert Seigneur, Michael Leuenberger, Winston Schoenfeld

Proceedings Volume 6903, 69030C (2008) https://doi.org/10.1117/12.761236

KEYWORDS: Polarization, Single photon, Quantum information, Interferometers, Mach-Zehnder interferometers, Switches, Photonic crystals, Error analysis, Quantum information processing, Quantum dots

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Proceedings Article | 7 February 2007 Paper

Optimization of GaAs PIN diodes for neutron detection

A. Thompson, J. Mares, H. Seigneur, W. Schoenfeld

Proceedings Volume 6468, 64680P (2007) https://doi.org/10.1117/12.699528

KEYWORDS: Sensors, Particles, Gallium arsenide, PIN photodiodes, Lithium, Ions, Atmospheric particles, Solid state electronics, Energy efficiency, Boron

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SPIE Journal Paper | 1 January 2007

Modeling of nitride based core/multishell nanowire light emitting diodes

Clarisse Mazuir, Winston Schoenfeld

JNP, Vol. 1, Issue 01, 013503, (January 2007) https://doi.org/10.1117/12.10.1117/1.2516674

KEYWORDS: Curium, Quantum wells, Indium gallium nitride, Light emitting diodes, Indium, Piezoelectric effects, Ray tracing, Instrument modeling, Gallium, Nanowires

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Proceedings Article | 29 September 2006 Paper

Enhanced luminescence from InAs/GaAs quantum dots

P. Holtz, E. Moskalenko, M. Larsson, K. Karlsson, W. Schoenfeld, P. Petroff

Proceedings Volume 6401, 64010I (2006) https://doi.org/10.1117/12.689820

KEYWORDS: Luminescence, Quantum dots, Gallium arsenide, Infrared lasers, Excitons, Electrons, Laser damage threshold, Laser energy, Luminous efficiency, Indium arsenide

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Single quantum dots (QDs), based on the InAs/GaAs material system have been characterized by micro-photoluminescence (μPL). The self-organized quantum dots studied are fabricated by the Stransky-Krastanov method, taking advantage of the strain caused by the lattice mismatch between InAs and GaAs. Well-defined narrow excitonic features from individual QDs are monitored in the μPL spectra, upon single or dual tunable laser excitation. The charge state of the quantum dot is revealed from these excitonic lines in the μPL spectra. However, by tuning the laser excitation energy, it is demonstrated that the charge state of the dot can be altered: The distribution of neutral and charged excitons is demonstrated to be extremely sensitive on the laser energy. In addition, with an additional infrared laser, striking changes are induced in the μPL spectra. The results achieved demonstrate the existence of two well-defined excitation energy regions for the main laser, in which the presence of the infrared laser will decrease or increase, respectively, the integrated dot μPL intensity. For excitation above the critical threshold energy of the main laser, the addition of the infrared laser will induce a considerable increase, by up to a factor 5, in the QD emission intensity. At laser excitation below the threshold energy, on the other hand, the QD emission intensity will decrease. This fact is due to reduced carrier capture efficiency into the dot as determined by the internal electric field driven carrier transport. In order to get further insight into the carrier capture process due to the electric field in the vicinity of the QD, the dots have also been subjected to an external electric field In most optical experiments with QDs, electrically injected or photoexcited carriers are primarily created somewhere in the sample outside the QDs, e.g. in the barriers or in the wetting layer. Consequently, excited carriers undergo a transport in the wetting layer and/or barriers prior to the capture into the QDs. This circumstance highlights the crucial role of the carrier transport and capture processes into the dot for the performance and operation of the dot based devices such as QD lasers, QD infrared detectors and QD memory devices. This transport effect on the optical response of the quantum dots has been investigated by subjecting the carriers to an external electric field in μPL measurements. This external field is formed by application of a lateral field between two top contacts. It is demonstrated that the QD PL signal intensity could be increased several times (>5 times) by optimizing the magnitude of this external field.

Showing 5 of 21 publications

Proceedings Volume Editor (12)

SPIE Conference Volume | 7 June 2019

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XII

SPIE Conference Volume | 27 June 2018

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XI

SPIE Conference Volume | 10 May 2017

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics X

SPIE Conference Volume | 23 August 2016

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IX

SPIE Conference Volume | 23 April 2015

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII

Showing 5 of 12 publications

Conference Committee Involvement (18)

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII

28 January 2024 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XVI

29 January 2023 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XV

23 January 2022 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XIV

6 March 2021 | Online Only, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XIII

2 February 2020 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XII

3 February 2019 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XI

28 January 2018 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics X

29 January 2017 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IX

14 February 2016 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII

8 February 2015 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VII

3 February 2014 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI

5 February 2013 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V

24 January 2012 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IV

25 January 2011 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III

25 January 2010 | San Francisco, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics II

26 January 2009 | San Jose, California, United States

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics

21 January 2008 | San Jose, California, United States

Micromachining Technology for Micro-optics and Nano-optics V

23 January 2007 | San Jose, California, United States

Showing 5 of 18 Conference Committees

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