The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

T. Suski; G. Franssen; A. Kamińska; A. Khachapuridze; H. Teisseyre; J. A. Plesiewicz; L. H. Dmowski; H. Lu; W. J. Schaff; M. Kurouchi; Y. Nanishi

doi:10.1117/12.705563

8 February 2007 The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

T. Suski, G. Franssen, A. Kamińska, A. Khachapuridze, H. Teisseyre, J. A. Plesiewicz, L. H. Dmowski, H. Lu, W. J. Schaff, M. Kurouchi, Y. Nanishi

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647311 (2007) https://doi.org/10.1117/12.705563
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We discuss the influence of indium segregation-induced disorder effects in In_xGa_1-xN alloys. Changes of the transport mechanism between InN and In_xGa_1-xN with x=0.58 were demonstrated by means of temperature-dependent conductivity measurements. Furthermore, an increase of (i) full width at half maximum of photoluminescence (PL) and (ii) the Stokes shift between PL and absorption was seen for samples approaching an In content of 0.5, which can also be attributed to growing disorder. Hydrostatic pressure dependent PL measurements of In-rich InGaN alloys are diacussed. Due to the fact that PL in InGaN originates from regions with higher-than-average In content, the luminescence pressure coefficient dE_E/dp should not be associated with the average In content, but with the In content which is in accordance with the energy of the photon emission. This correction leads to a reduction of the large bowing of dE_E/dp (associated with the band gap) which was reported earlier. Furthermore, it is shown that the electron concentration in InN has a significant influence on the measured value of dE_E/dp.

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T. Suski, G. Franssen, A. Kamińska, A. Khachapuridze, H. Teisseyre, J. A. Plesiewicz, L. H. Dmowski, H. Lu, W. J. Schaff, M. Kurouchi, and Y. Nanishi "The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647311 (8 February 2007); https://doi.org/10.1117/12.705563

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