Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

T. W. Kuo; T. Y. Lin; Z. C. Feng; W. Liu; S. J. Chua; H. L. Tsai; J. R. Yang; Y. S. Huang; Ian T. Ferguson; W. Lu

doi:10.1117/12.825895

18 August 2009 Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

T. W. Kuo, T. Y. Lin, Z. C. Feng, W. Liu, S. J. Chua, H. L. Tsai, J. R. Yang, Y. S. Huang, Ian T. Ferguson, W. Lu

Author Affiliations +

Proceedings Volume 7422, Ninth International Conference on Solid State Lighting; 74220Q (2009) https://doi.org/10.1117/12.825895
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

Three blue emission multi-quantum well (MQW) light emitting diode (LED) samples with different indium composition and different amount of quantum wells were studied. From x-ray diffraction and transmission electron microscopy experimental measurements, the period thickness and indium composition of the sample have been obtained. The temperature dependent photoluminescence (PL) shows that the signal from InGaN/GaN samples was influenced by two kinds of factors. One is the band to band transition of InGaN; another is the localization effect caused by the non-uniformity of the In composition in In-rich samples. While the temperature increases, full width half maximum becomes larger, and the signal tends to shift to the red side. Through theoretical fitting on the temperature dependent PL data, the activation energies (Ea) of the InGaN multi-quantum well samples were obtained. Time-resolved photoluminescence (TRPL) results show that as the indium composition increases and the QW number increases, a longer decay time will get. From the results of photoluminescence excitation (PLE) experiment, a large Stokes shift (SS) was observed. The large Stokes shift can be attributed to the variation of indium composition or the quantum confined Stark effect (QCSE). Also, the Photoluminescence spectra exhibit weak blue peaks and the optical intensity is improved by increasing the number of wells.

Citation Download Citation

T. W. Kuo, T. Y. Lin, Z. C. Feng, W. Liu, S. J. Chua, H. L. Tsai, J. R. Yang, Y. S. Huang, Ian T. Ferguson, and W. Lu "Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 74220Q (18 August 2009); https://doi.org/10.1117/12.825895

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
13 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Indium

Indium gallium nitride

Luminescence

Light emitting diodes

Quantum wells

Gallium nitride

X-ray diffraction

Show All Keywords

Keywords/Phrases

Search In:

Publication Years