Prof. Zhe Chuan Feng Profile

Prof. Zhe Chuan Feng

Distinguished Professor

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 15 October 2012 Paper

Time-resolved and temperature-varied photoluminescence studies of InGaN/GaN multiple quantum well structures

Lei Liu, Wenjie Wang, J.-L. Huang, Xiaodong Hu, Peng Chen, J.-J. Huang, Zhe Chuan Feng

Proceedings Volume 8484, 848412 (2012) https://doi.org/10.1117/12.928995

KEYWORDS: Indium gallium nitride, Quantum wells, Luminescence, Gallium nitride, Temperature metrology, Light emitting diodes, Indium, Semiconductor lasers, Metalorganic chemical vapor deposition, Light sources and illumination

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Proceedings Article | 15 October 2012 Paper

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Lin Li, Chi-Jing Hong-Liao, Yi Zhe Huang, Cheng Chen, Shude Yao, Zi Qiu, H. Lin, Ian Ferguson, Zhe Chuan Feng

Proceedings Volume 8484, 84840Y (2012) https://doi.org/10.1117/12.928862

KEYWORDS: Gallium arsenide, Metalorganic chemical vapor deposition, Aluminum, FT-IR spectroscopy, Error analysis, Gallium, Raman spectroscopy, Reflectivity, Luminescence, Light emitting diodes

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Proceedings Article | 26 September 2011 Paper

X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition

Y. Lan, S.-P. Liu, C. Wei, Y.-C. Fu, Y. Wu, J. Chen, R.-H. Horng, D.-S. Wuu, Z. Feng

Proceedings Volume 8104, 81040X (2011) https://doi.org/10.1117/12.893087

KEYWORDS: Sapphire, Zinc oxide, Crystals, Raman spectroscopy, Absorption, Aluminum, Thin films, X-rays, Pulsed laser deposition, Raman scattering

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Proceedings Article | 24 September 2011 Paper

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

J.-L. Huang, L. S. Wang, Y.-S. Lai, Y.-C. Lee, Z. R. Qiu, S. Liu, D.-S. Wuu, Z. C. Feng

Proceedings Volume 8123, 81230C (2011) https://doi.org/10.1117/12.893080

KEYWORDS: Indium gallium nitride, Gallium nitride, Light emitting diodes, Luminescence, Quantum wells, Raman spectroscopy, Metalorganic chemical vapor deposition, Epitaxial lateral overgrowth, Temperature metrology, Optical properties

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Proceedings Article | 23 September 2011 Paper

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

T.-Y. Lin, L. Li, C. Chen, Y.-L. Chung, S. D. Yao, Y.-C. Lee, Z. Qiu, I. Ferguson, D.-S. Wuu, Z. C. Feng

Proceedings Volume 8123, 812309 (2011) https://doi.org/10.1117/12.892932

KEYWORDS: Aluminum, Raman spectroscopy, Aluminum nitride, Sapphire, Luminescence, Gallium, Backscatter, Phonons, Metalorganic chemical vapor deposition, Thin films

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Proceedings Article | 24 August 2010 Paper

Rutherford backscattering and optical studies for ZnO thin films on sapphire substrates grown by metalorganic chemical vapor deposition

Yee Ling Chung, Lin Li, Shude Yao, Zhe Chuan Feng, William Fenwick, Tahir Zaidi, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 778416 (2010) https://doi.org/10.1117/12.859109

KEYWORDS: Zinc oxide, Sapphire, Thin films, Scanning electron microscopy, Metalorganic chemical vapor deposition, Transmittance, Atomic force microscopy, Backscatter, Refractive index, Zinc

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Proceedings Article | 18 August 2010 Paper

High brightness GaN light emitting diodes with different barrier widths in quantum wells for general lighting application

I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Gang Li, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 77840Z (2010) https://doi.org/10.1117/12.859780

KEYWORDS: Light emitting diodes, Quantum wells, Luminescence, Indium gallium nitride, Temperature metrology, Gallium nitride, X-ray diffraction, Sapphire, Metalorganic chemical vapor deposition, X-rays

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Proceedings Article | 18 August 2010 Paper

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

Tse Yang Lin, Yee Ling Chung, Lin Li, Shude Yao, Y. C. Lee, Zhe Chuan Feng, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 778415 (2010) https://doi.org/10.1117/12.859106

KEYWORDS: Aluminum, Sapphire, Gallium, Raman spectroscopy, Scanning electron microscopy, Metalorganic chemical vapor deposition, X-ray diffraction, Aluminum nitride, Backscatter, X-rays

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Proceedings Article | 18 August 2010 Paper

Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition

I-Hsiang Hung, Yu-Hsiang Lai, Zhe Chuan Feng, Shalini Gupta, Tahir Zaidi, Ian Ferguson, Weijie Lu

Proceedings Volume 7784, 77840H (2010) https://doi.org/10.1117/12.859107

KEYWORDS: Gadolinium, Gallium nitride, Electrons, Metalorganic chemical vapor deposition, Chemical elements, Semiconductors, Luminescence, Doping, Photons, Excitons

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Proceedings Article | 12 September 2009 Paper

Synchrotron radiation x-ray absorption fine-structure and Raman studies on CdZnTe ternary alloys

Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, Weijie Lu

Proceedings Volume 7449, 74490Q (2009) https://doi.org/10.1117/12.825823

KEYWORDS: Tellurium, Raman spectroscopy, Crystals, Absorption, Zinc, X-rays, Sensors, Phonons, Spectroscopy, Chemical species

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Proceedings Article | 11 September 2009 Paper

Far-IR reflectance spectra analysis of CdZnTe and related materials

Tzuen-Rong Yang, Sheng-Hong Jhang, Yen-Hao Shih, Fu-Chung Hou, Yu-Chang Yang, P. Becla, Der-Chi Tien, Zhe Chuan Feng

Proceedings Volume 7449, 74490L (2009) https://doi.org/10.1117/12.825874

KEYWORDS: Selenium, Reflectivity, Phonons, Dielectrics, Zinc, Infrared radiation, FT-IR spectroscopy, Oscillators, Crystals, Far infrared

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Proceedings Article | 22 August 2009 Paper

Synchrotron radiation x-ray absorption fine-structure and raman scattering studies on 6H-SiC materials

Yi-Li Tu, Zhe Chuan Feng, Ling-Yun Jang, Weijie Lu

Proceedings Volume 7425, 74250Y (2009) https://doi.org/10.1117/12.825811

KEYWORDS: Silicon carbide, Absorption, X-rays, Chemical species, Doping, Raman spectroscopy, Silicon, Crystals, Synchrotron radiation, Raman scattering

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Proceedings Article | 18 August 2009 Paper

Nanoscale InGaN/GaN on ZnO substrate for LED applications

I-Hsiang Hung, You-Ren Lan, Tsung Han Wu, Zhe Chuan Feng, Nola Li, Hongbo Yu, Ian Ferguson, Weijie Lu

Proceedings Volume 7422, 74220K (2009) https://doi.org/10.1117/12.825851

KEYWORDS: Zinc oxide, Indium gallium nitride, Gallium nitride, Silicon, Refractive index, Doping, Raman spectroscopy, Gallium, Metalorganic chemical vapor deposition, Luminescence

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Proceedings Article | 18 August 2009 Paper

III-nitride epilayers on ZnO Substrates by MOCVD using Al2O3 as a transition layer

Nola Li, Will Fenwick, Andrew Melton, I-Hsiang Hung, Zhe Chuan Feng, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220J (2009) https://doi.org/10.1117/12.829482

KEYWORDS: Zinc oxide, Indium gallium nitride, Light emitting diodes, Gallium nitride, Metalorganic chemical vapor deposition, Sapphire, Zinc, Atomic layer deposition, Indium, Diffusion

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Proceedings Article | 18 August 2009 Paper

Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

T. Kuo, T. Lin, Z. Feng, W. Liu, S. Chua, H. Tsai, J. Yang, Y. Huang, Ian Ferguson, W. Lu

Proceedings Volume 7422, 74220Q (2009) https://doi.org/10.1117/12.825895

KEYWORDS: Indium, Luminescence, Indium gallium nitride, Light emitting diodes, Quantum wells, X-ray diffraction, Gallium nitride, Optical properties, Transmission electron microscopy, Absorption

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Proceedings Article | 9 September 2008 Paper

Optical and material characteristics of InAs/GaAs quantum dots

Sa Huang, Pin-Fang Huang, Zhe Chuan Feng, April Brown, Weijie Lu

Proceedings Volume 7039, 70391I (2008) https://doi.org/10.1117/12.795580

KEYWORDS: Quantum dots, Annealing, Indium arsenide, Luminescence, Atomic force microscopy, Gallium arsenide, Scattering, Molecular beam epitaxy, Temperature metrology, Atomic force microscope

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Proceedings Article | 4 September 2008 Paper

Field emission properties of multi-wall carbon nanotubes

Zhe-Chuan Feng, Yi-Zhe Huang, Jyh-Hua Ting, Li-Chyong Chen, Weijie Lu

Proceedings Volume 7037, 70370R (2008) https://doi.org/10.1117/12.795563

KEYWORDS: Carbon nanotubes, Nickel, Microwave radiation, Plasma enhanced chemical vapor deposition, Titanium, Hydrogen, Plasma, Chemical analysis, Diodes, Carbon

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Proceedings Article | 2 September 2008 Paper

Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes

Zhe Chuan Feng, Ting-Wei Kuo, C. Y. Wu, Hong-Ling Tsai, Jer-Ren Yang, Y. S. Huang, Ian Ferguson, Weijie Lu

Proceedings Volume 7058, 70580S (2008) https://doi.org/10.1117/12.795255

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Luminescence, Indium, Gallium nitride, Metalorganic chemical vapor deposition, Temperature metrology, Sapphire, Excitons

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Proceedings Article | 2 September 2008 Paper

Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al₂O₃ as a transition layer

Nola Li, Shen-Jie Wang, Chung-Lung Huang, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Christopher Summers, Ian Ferguson

Proceedings Volume 7058, 70580K (2008) https://doi.org/10.1117/12.797946

KEYWORDS: Gallium nitride, Zinc oxide, Indium gallium nitride, Zinc, Annealing, Metalorganic chemical vapor deposition, Corundum, Diffusion, Atomic layer deposition, Crystals

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Proceedings Article | 29 August 2008 Paper

Surface and material characteristics of Ga2O3 thin films on GaAs

Ping-Fong Huang, Yen-Ting Chen, H. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, Weijie Lu

Proceedings Volume 7067, 70670M (2008) https://doi.org/10.1117/12.795535

KEYWORDS: Gallium, Annealing, Gallium arsenide, Oxygen, X-ray diffraction, Scanning electron microscopy, Interfaces, X-rays, Photoemission spectroscopy, Thin films

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Proceedings Article | 28 September 2007 Paper

Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: effects of nano-structural features

Z. Lee, Z. Feng, H. Tsai, J. Yang, A. Li, L. Chen, K. Chen, Y. Chen, I. Ferguson, W. Lu

Proceedings Volume 6797, 67970S (2007) https://doi.org/10.1117/12.758980

KEYWORDS: Indium gallium nitride, Quantum wells, Luminescence, Light emitting diodes, Gallium nitride, Excitons, Transmission electron microscopy, Blue light emitting diodes, Temperature metrology, Satellites

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Proceedings Article | 17 September 2007 Paper

Growth of InGaN with high indium content on ZnO based sacrificial substrates

Nola Li, Shen-Jie Wang, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Chris Summers, Ian Ferguson

Proceedings Volume 6669, 66690X (2007) https://doi.org/10.1117/12.741932

KEYWORDS: Indium gallium nitride, Zinc oxide, Indium, Gallium nitride, Aluminum, Annealing, Metalorganic chemical vapor deposition, Crystals, Diffusion, Zinc

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Proceedings Article | 14 September 2007 Paper

Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Z. S. Lee, Z. C. Feng, A. G. Li, H. Tsai, J. Yang, Y. F. Chen, N. Li, I. Ferguson, W. Lu

Proceedings Volume 6669, 66690I (2007) https://doi.org/10.1117/12.741718

KEYWORDS: Indium gallium nitride, Luminescence, Indium, Light emitting diodes, Gallium nitride, Quantum wells, Metalorganic chemical vapor deposition, Transmission electron microscopy, Blue light emitting diodes, Satellites

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Proceedings Article | 12 September 2006 Paper

Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

Z. Feng, J. Chen, H. Tsai, J. Yang, P. Li, C. Wetzel, T. Detchprohm, J. Nelson, I. Ferguson

Proceedings Volume 6337, 63370D (2006) https://doi.org/10.1117/12.677653

KEYWORDS: Quantum wells, Green light emitting diodes, Luminescence, Light emitting diodes, Indium gallium nitride, Gallium nitride, Indium, Sapphire, Transmission electron microscopy, Absorption

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Proceedings Article | 30 August 2006 Paper

Optical and structural studies of copper nanoparticles and microfibers produced by using carbon nanotube as templates

Z. Feng, B. Xue, P. Chen, J. Lin, W. Lu, N. Li, I. Ferguson

Proceedings Volume 6321, 63210H (2006) https://doi.org/10.1117/12.677666

KEYWORDS: Copper, Carbon nanotubes, Nanoparticles, Raman spectroscopy, Raman scattering, Luminescence, Scanning electron microscopy, Transmission electron microscopy, X-ray diffraction, Optical fibers

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Proceedings Article | 7 July 2005 Paper

Metalorganic chemical vapor deposition and structural/optical characteristics of InGaN/GaN multiple quantum wells grown on sapphire for light emitting diode application

Zhe Feng, Jheng-Hong Chen, Hung-Ling Tsai, Jer-Ren Yang, Alan Li

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608542

KEYWORDS: Quantum wells, Light emitting diodes, Metalorganic chemical vapor deposition, Sapphire, Gallium nitride, Luminescence, Transmission electron microscopy, Satellites, Indium gallium nitride, Semiconducting wafers

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SPIE Journal Paper | 1 August 2002

Micro-Raman scattering and micro-photoluminescence of GaN thin films grown on sapphire by metalorganic chemical vapor deposition

Zhe Chuan Feng

OE, Vol. 41, Issue 08, (August 2002) https://doi.org/10.1117/12.10.1117/1.1489051

KEYWORDS: Gallium nitride, Raman spectroscopy, Sapphire, Ultraviolet radiation, Micro raman spectroscopy, Phonons, Remote sensing, Scattering, Raman scattering, Thin films

Proceedings Article | 29 September 2000 Paper

Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition

Zhe Chuan Feng, W. Wang, Wei Liu, Soo-Jin Chua, Geraint Evans, Martin Kuball, Ken Williams, G. Pitt

Proceedings Volume 4098, (2000) https://doi.org/10.1117/12.401629

KEYWORDS: Gallium nitride, Raman spectroscopy, Raman scattering, Ultraviolet radiation, Sapphire, Metalorganic chemical vapor deposition, Phonons, Micro raman spectroscopy, Doping, Microscopes

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Proceedings Article | 11 July 2000 Paper

Optical and transport properties of MOCVD-grown InSb thin films

Tzuen Rong Yang, Goutam Kuri, MiRa Kim, Zhe Chuan Feng, Soo-Jin Chua

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392105

KEYWORDS: Gallium arsenide, Reflectivity, Dielectrics, Crystals, Phonons, Thin films, Ions, Metalorganic chemical vapor deposition, Indium, Far infrared

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Proceedings Article | 11 July 2000 Paper

Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate

W. Chan, Zhe Chuan Feng, Soo-Jin Chua, Jianyi Lin

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392142

KEYWORDS: Silicon carbide, Reflectivity, Silicon, Infrared radiation, Crystals, Plasma, Dielectrics, Phonons, Surface roughness, Low pressure chemical vapor deposition

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Proceedings Article | 9 November 1999 Paper

Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition

Jingli Chen, Zhe Chuan Feng, X. Zhang, Soo-Jin Chua, Yong Hou, Jianyi Lin

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369404

KEYWORDS: Gallium nitride, Silicon, Metalorganic chemical vapor deposition, Crystals, FT-IR spectroscopy, Scanning electron microscopy, Silicon films, Transmission electron microscopy, Raman spectroscopy, Reflectivity

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Proceedings Article | 9 November 1999 Paper

Comparative investigation of high-resolution transmission electron microscopy and Fourier transform infrared spectroscopy for GaN films on sapphire substrate

Kun Li, Yong Hou, Zhe Chuan Feng, Soo-Jin Chua, Ming Fu Li, Ernest Lau, Andrew Wee

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369444

KEYWORDS: Gallium nitride, Transmission electron microscopy, Reflectivity, Interfaces, Sapphire, FT-IR spectroscopy, Atomic force microscopy, Silicon, Diffraction, Infrared radiation

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Proceedings Article | 9 November 1999 Paper

Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition

Peng Li, Soo-Jin Chua, Zhe Chuan Feng, W. Wang, Maosheng Hao, Tamoya Sugahara, Shiro Sakai

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369413

KEYWORDS: Indium gallium nitride, Luminescence, Scanning electron microscopy, Atomic force microscopy, Metalorganic chemical vapor deposition, Gallium nitride, X-ray diffraction, Indium, Sapphire, Quantum dots

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Proceedings Article | 8 April 1998 Paper

Breakdown mechanisms in Al(GaN) MSM photodetectors

Ian Ferguson, Matthew Schurman, Robert Karlicek, Zhe Chuan Feng, S. Lianga, Yicheng Lu, Charles Joseph

Proceedings Volume 3287, (1998) https://doi.org/10.1117/12.304503

KEYWORDS: Photodetectors, Sensors, Electrodes, Aluminum, Ultraviolet radiation, Sapphire, Gallium nitride, Metals, Information operations, Ultraviolet detectors

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Proceedings Article | 7 April 1998 Paper

MOCVD growth and characterization of 100-mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications

Zhe Chuan Feng, Ian Ferguson, Eric Armour, Ashok Chadha, N. Masaun, Richard Stall

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304422

KEYWORDS: Semiconducting wafers, Metalorganic chemical vapor deposition, Raman spectroscopy, Nondestructive evaluation, Light emitting diodes, Raman scattering, Aluminum, FT-IR spectroscopy, Gallium arsenide, Crystals

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Proceedings Article | 15 April 1997 Paper

Growth of III-nitrides for photodetector applications

Ian Ferguson, Chuong Tran, Robert Karlicek, Zhe Chuan Feng, Richard Stall, Shaohua Liang, W. Cai, Yuxin Li, Y. Liu, Y. Lu

Proceedings Volume 2999, (1997) https://doi.org/10.1117/12.271209

KEYWORDS: Gallium nitride, Photodetectors, Ultraviolet radiation, Magnesium, Sensors, Sapphire, Semiconducting wafers, Ultraviolet detectors, Metalorganic chemical vapor deposition, Doping

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