Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Lin Li; Chi-Jing Hong-Liao; Yi Zhe Huang; Cheng Chen; Shude Yao; Zi Rong Qiu; H. H. Lin; Ian T. Ferguson; Zhe Chuan Feng

doi:10.1117/12.928862

15 October 2012 Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Lin Li, Chi-Jing Hong-Liao, Yi Zhe Huang, Cheng Chen, Shude Yao, Zi Rong Qiu, H. H. Lin, Ian T. Ferguson, Zhe Chuan Feng

Author Affiliations +

Proceedings Volume 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting; 84840Y (2012) https://doi.org/10.1117/12.928862
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

Quaternary III-V compound InAlGaP, especially In0.5(Al_xGa_1-x)0.5P which is lattice matched with GaAs, are important materials for visible red-green light emitting diode (LED) and laser diode (LD), solar cell and other optoelectronic and electronic device applications. A set of In_0.5(Al_xGa_1-x)_0.5P thin films on GaAs substrates with a wide range of x up to ~80%, were grown by low pressure metalorganic chemical vapor deposition (MOCVD) and studied by a variety of nuclear science and optical analytical techniques, including Rutherford Backscattering Spectrometry (RBS), Raman scattering, photoluminescence (PL), Photoreflectance (PR) and FTIR. Temperature dependent PL-PR measurements over 10-300 K presented the band gap of these InAlGaP materials and variations with composition x and temperature (T). RBS was used to measure the microstructure of AlInGaP films, and through simulation, determine the film thickness and composition precisely. RBS measurement and simulation results indicate a quite fuzzy in the two interfaces, i.e. that there exists diffusion in the majority samples, especially between the AlInGaP layer and substrate. For a certain number of incoming He+ ions,we have proposed a way to determine the error bar by RBS successful. For this series of samples, the error bar of content is around ±1.5%. The error bar of thickness is around ±5.0nm. Different InAlGaP films with different composition and thickness may present different error bars. The results illuminate that RBS is a precise tool to analysis the microstructure of quaternary semiconductor AlInGaP/GaAs samples.

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Lin Li, Chi-Jing Hong-Liao, Yi Zhe Huang, Cheng Chen, Shude Yao, Zi Rong Qiu, H. H. Lin, Ian T. Ferguson, and Zhe Chuan Feng "Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84840Y (15 October 2012); https://doi.org/10.1117/12.928862

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KEYWORDS

Gallium arsenide

Aluminum

Metalorganic chemical vapor deposition

Error analysis

FT-IR spectroscopy

Gallium

Raman spectroscopy

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