Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

J.-L. Huang; L. S. Wang; Y.-S. Lai; Y.-C. Lee; Z. R. Qiu; S. Liu; D.-S. Wuu; Z. C. Feng

doi:10.1117/12.893080

23 September 2011 Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

J.-L. Huang, L. S. Wang, Y.-S. Lai, Y.-C. Lee, Z. R. Qiu, S. Liu, D.-S. Wuu, Z. C. Feng

Author Affiliations +

Proceedings Volume 8123, Eleventh International Conference on Solid State Lighting; 81230C (2011) https://doi.org/10.1117/12.893080
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (1122) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial lateral overgrowth GaN with (11 2 2) facets on the structural and optical properties were investigated via photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two distinguish peaks attributed to quantum wells with wide range wavelength. Raman E₂ (high) signals revealed a partially relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time (equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (1122) facets. Temperature dependence of PL decay time τPL shows an interesting behavior of τ_PL with temperature.

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J.-L. Huang, L. S. Wang, Y.-S. Lai, Y.-C. Lee, Z. R. Qiu, S. Liu, D.-S. Wuu, and Z. C. Feng "Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230C (23 September 2011); https://doi.org/10.1117/12.893080

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