A CMOS-compatible rib waveguide with local oxidation of silicon isolation

Lynda K. Rowe; Michael Elsey; Edith Post; N. Garry Tarr; Andrew P. Knights

doi:10.1117/12.714641

9 February 2007 A CMOS-compatible rib waveguide with local oxidation of silicon isolation

Lynda K. Rowe, Michael Elsey, Edith Post, N. Garry Tarr, Andrew P. Knights

Proceedings Volume 6477, Silicon Photonics II; 64770L (2007) https://doi.org/10.1117/12.714641
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The Local Oxidation of Silicon (LOCOS) technique is used to define optical rib waveguides in silicon-on-insulator (SOI) material. This process, commonly used for device isolation in purely microelectronic CMOS processes, results in a nearly planar surface suitable for integrating optical and electronic components on the same chip. Optical mode simulation was used to determine rib geometries suitable for single-mode propagation and minimizing birefringence in the 1550 nm optical telecommunications band. Test devices were then fabricated in SOI material with a Si film thickness near 3 microns. Growth of a 1 micron field oxide by wet oxidation yielded a 0.5 micron rib height. As-drawn rib widths ranged from 3 microns to 5 microns, giving final rib widths ranging from 2 microns to 4 microns after oxidation. Cutback optical testing of 3 microns drawn width ribs showed the loss to be less than 1 dB/cm at 1555 nm. Unbalanced Mach-Zehnder interferometers with Y-splitter junctions were also fabricated and tested with input wavelength swept from 1470 to 1580 nm and showed an extinction of 6-10 dB, demonstrating the ability of the LOCOS rib technique to produce more complex waveguide devices.

Citation Download Citation

Lynda K. Rowe, Michael Elsey, Edith Post, N. Garry Tarr, and Andrew P. Knights "A CMOS-compatible rib waveguide with local oxidation of silicon isolation", Proc. SPIE 6477, Silicon Photonics II, 64770L (9 February 2007); https://doi.org/10.1117/12.714641

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