Component segregation in model chemically amplified resists

John T. Woodward; Theodore H. Fedynyshyn; David K. Astolfi; Susan Cann; Jeanette M. Roberts; Michael J. Leeson

doi:10.1117/12.711152

21 March 2007 Component segregation in model chemically amplified resists

John T. Woodward, Theodore H. Fedynyshyn, David K. Astolfi, Susan Cann, Jeanette M. Roberts, Michael J. Leeson

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651915 (2007) https://doi.org/10.1117/12.711152
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We have applied chemical force microscopy (CFM) to probe the surface roughness of partially developed model resist materials in order to understand the fundamental materials properties of the resists leading to line edge roughness (LER). CFM is capable of providing simultaneous information about surface topography and chemical heterogeneity of partially developed resist films. We have used CFM to study ESCAP type resists that are used in 248 nm and extreme ultraviolet (EUV) lithography. We observe changes in both the innate material roughness and chemical heterogeneity of the resist with the introduction of photoacid generator (PAG) and with exposure and post exposure bake (PEB). We find several mechanisms by which chemical heterogeneity can contribute to increasing the innate material roughness of the resist.

Citation Download Citation

John T. Woodward, Theodore H. Fedynyshyn, David K. Astolfi, Susan Cann, Jeanette M. Roberts, and Michael J. Leeson "Component segregation in model chemically amplified resists", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651915 (21 March 2007); https://doi.org/10.1117/12.711152

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