Paper
27 March 2007 The impact of the mask stack and its optical parameters on the imaging performance
Andreas Erdmann, Tim Fühner, Sebastian Seifert, Stephan Popp, Peter Evanschitzky
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Abstract
Rigorous electromagnetic field (EMF) simulations of light diffraction from the mask in combination with vector imaging simulation are used to explore the impact of the optical mask parameters on the diffraction and imaging performance. Optical mask parameters and mask stack configurations are varied over a wide range and independently from the presently used materials. The results are evaluated in terms of diffraction efficiencies and typical lithographic performance criteria such as iso-dense bias, mask error enhancement factor (MEEF), sidelobe-printability, and (overlapping) process windows. Both local and global optimization techniques are used to identify optimum parameter settings. The results are compared with the performance of standard mask stacks and parameters.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Tim Fühner, Sebastian Seifert, Stephan Popp, and Peter Evanschitzky "The impact of the mask stack and its optical parameters on the imaging performance", Proc. SPIE 6520, Optical Microlithography XX, 65201I (27 March 2007); https://doi.org/10.1117/12.709351
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Photomasks

Diffraction

Refractive index

Polarization

Semiconducting wafers

Phase shifts

Lithography

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