Paper
11 May 2007 EUV-mask pattern inspection using current DUV reticle inspection tool
Tsukasa Abe, Akiko Fujii, Shiho Sasaki, Hiroshi Mohri, Hidemichi Imai, Hironobu Takaya, Yasushi Sato, Naoya Hayashi, Yumiko Maenaka
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Abstract
EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch pattern, and between die to die mode and die to database mode. Inspection sensitivity difference was not observed between before buffer etch pattern and after buffer etch pattern. In addition to defect inspection, wafer print simulation of program defect was investigated. Simulation results were compared to inspection result. We confirmed current DUV reticle inspection tool has potential for EUV mask defect inspection.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsukasa Abe, Akiko Fujii, Shiho Sasaki, Hiroshi Mohri, Hidemichi Imai, Hironobu Takaya, Yasushi Sato, Naoya Hayashi, and Yumiko Maenaka "EUV-mask pattern inspection using current DUV reticle inspection tool", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070L (11 May 2007); https://doi.org/10.1117/12.728935
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Cited by 8 scholarly publications.
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KEYWORDS
Inspection

Photomasks

Extreme ultraviolet

Opacity

Defect inspection

Semiconducting wafers

Deep ultraviolet

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