High-speed photodiodes for 2.0-4.0 µm spectral range

Yu. P. Yakovlev; I. A. Andreev; S. S. Kizhayev; E. V. Kunitsyna; M. P. Mikhailova

doi:10.1117/12.742322

26 April 2007 High-speed photodiodes for 2.0-4.0 μm spectral range

Yu. P. Yakovlev, I. A. Andreev, S. S. Kizhayev, E. V. Kunitsyna, M. P. Mikhailova

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360D (2007) https://doi.org/10.1117/12.742322
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise and speed-response characteristics were studied. In addition to high-speed response and low noise level these photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser rangefinding systems, the free-space optical link as well as systems of optical fiber communication.

Citation Download Citation

Yu. P. Yakovlev, I. A. Andreev, S. S. Kizhayev, E. V. Kunitsyna, and M. P. Mikhailova "High-speed photodiodes for 2.0-4.0 μm spectral range", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360D (26 April 2007); https://doi.org/10.1117/12.742322

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