Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

B. Q. Cao; M. Lorenz; H. von Wenckstern; C. Czekalla; M. Brandt; J. Lenzner; G. Benndorf; G. Biehne; M. Grundmann

doi:10.1117/12.763435

15 February 2008 Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann

Author Affiliations +

Proceedings Volume 6895, Zinc Oxide Materials and Devices III; 68950V (2008) https://doi.org/10.1117/12.763435
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Phosphorous-doped ZnO (ZnO:P) nanowires were prepared by a high-pressure pulsed laser deposition process. To extend the size range of available wires, μm-thick ZnO:P microwires were grown additionally by a direct carbothermal deposition process. Low-temperature cathodoluminescence of single ZnO:P nanowires grown by both processes exhibit characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission ((A⁰, X), 3.356 eV), free-electron to neutral-acceptor emission ((e, A⁰), 3.314 eV), and donor-to-acceptor pair emission (DAP, ~3.24 and ~3.04 eV). This proves that stable phosphorus acceptor levels have been induced into the ZnO:P nano- and microwires. From the quantitative evaluation of the spectroscopic features we deduct an acceptor binding energy of 122 meV. The ZnO:P microwires were used as channels in bottom-gate field effect transistors (FET) built on Si substrates with SiO₂ gate oxide. The electrical FET-characteristics of several wires show reproducibly clear qualitative indication for p-type conductivity for variation of gate voltage. This behavior is opposite to that of nominally undoped, n-type conducting wires investigated for comparison. The p-type conductivity was found to be stable over more than six months.

Citation Download Citation

B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, and M. Grundmann "Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950V (15 February 2008); https://doi.org/10.1117/12.763435

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