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Lithography simulation has proven to be a technical enabler to shorten development cycle time and provide direction
before next-generation exposure tools and processes are available. At the early stages of design rule definition for a new
technology node, small critical areas of layout are of concern, and optical proximity correction (OPC) is required to
allow full exploration of the 2D rule space. In this paper, we demonstrate the utility of fast, resist-model-based, OPC
correction to explore process options and optimize 2D layout rules for advanced technologies. Unlike conventional OPC
models that rely on extensive empirical CD-SEM measurements of real wafers, the resist-based OPC model for the
correction is generated using measured bulk parameters of the photoresist such as dissolution rate. The model therefore
provides extremely accurate analysis capability well in advance of access to advanced exposure tools. We apply this
'virtual patterning' approach to refine lithography tool settings and OPC strategies for a collection of 32-nm-node layout
clips. Different OPC decorations including line biasing, serifs, and assist features, are investigated as a function of NA
and illumination conditions using script-based optimization sequences. Best process conditions are identified based on
optimal process window for a given set of random layouts. Simulation results, including resist profile and CD process
window, are validated by comparison to wafer images generated on an older-generation exposure tool. The ability to
quickly optimize OPC as a function of illumination setting in a single simulation package allows determination of
optimum illumination source for random layouts faster and more accurately than what has been achievable in the past.
This approach greatly accelerates design rule determination.
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