Paper
19 March 2008 Validation and application of a mask model for inverse lithography
Thuc H. Dam, Xin Zhou, Dongxue Chen, Anthony Adamov, Danping Peng, Bob Gleason
Author Affiliations +
Abstract
As photomask critical dimensions shrink significantly below the exposure wavelength and the angle of off-axis illumination increases, the use of Kirchhoff thin mask approximation cannot capture diffraction and polarization effects that occur at a topographical mask surface. Such approximation errors result in inaccurate models that lead to poor prediction for image simulation, which can waste time and money during lithographic process development cycle. The real effects of a thick mask can be simulated using finite difference time domain (FDTD) electromagnetic (EM) field calculations, or be better approximated with less error using such techniques such as boundary layer or various Fourier transformation techniques.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thuc H. Dam, Xin Zhou, Dongxue Chen, Anthony Adamov, Danping Peng, and Bob Gleason "Validation and application of a mask model for inverse lithography", Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251J (19 March 2008); https://doi.org/10.1117/12.773081
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Finite-difference time-domain method

Calibration

Photomasks

SRAF

3D modeling

Panoramic photography

Lithography

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