Paper
15 May 2008 Comparison of performance of quantum dot and other types of infrared photodetectors
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Abstract
Investigations of the performance of quantum dot infrared photodetectors (QDIPs) as compared to other types of infrared photodetectors are presented. A model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active detector's region. In comparative studies, the HgCdTe photodiodes, quantum well infrared photodetectors (QWIPs), type II superllatice photodiodes, Schottky barrier photoemissive detectors, doped silicon detectors, and high temperature superconductor detectors are considered. HgCdTe photodiodes indicate better performance in comparison with other types of infrared detectors. HgCdTe is characterized by high absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to other types of devices. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. Comparison of theoretically predicted and experimental data indicates that, as so far, the QDIP devices have not demonstrated their potential advantages and are expected to posses the fundamental ability to achieve higher detector performance. Poor QDIP performance is generally linked to nonoptimal band structure and controlling the QDs size and density (nonuniformity in QD size).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Martyniuk and A. Rogalski "Comparison of performance of quantum dot and other types of infrared photodetectors", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694004 (15 May 2008); https://doi.org/10.1117/12.785200
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Cited by 14 scholarly publications.
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KEYWORDS
Sensors

Mercury cadmium telluride

Photodiodes

Quantum dots

Quantum well infrared photodetectors

Photodetectors

Absorption

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