Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures

Kuang-Po Hsueh; Ren-Jie Hou; Cheng-Huang Kuo; Chun-Ju Tun

doi:10.1117/12.802840

18 November 2008 Reactive ion etching of ZnO using the H₂/CH₄ and H₂/CH₄/Ar mixtures

Kuang-Po Hsueh, Ren-Jie Hou, Cheng-Huang Kuo, Chun-Ju Tun

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71350D (2008) https://doi.org/10.1117/12.802840
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H₂/CH₄ and H₂/CH₄/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H₂/CH₄ flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H₂/CH₄/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

Citation Download Citation

Kuang-Po Hsueh, Ren-Jie Hou, Cheng-Huang Kuo, and Chun-Ju Tun "Reactive ion etching of ZnO using the H₂/CH₄ and H₂/CH₄/Ar mixtures", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350D (18 November 2008); https://doi.org/10.1117/12.802840

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