Electron injection behavior from the magnesium electrode into a family of electron-transporting amorphous molecular materials, a,w-bis(dimesitylboryl)oligothiophene

Fengling Zhang; Tetsuya Noda; Hiroshi Kageyama; Yasuhiko Shirota

doi:10.1117/12.814387

12 February 2009 Electron injection behavior from the magnesium electrode into a family of electron-transporting amorphous molecular materials, a,ω-bis(dimesitylboryl)oligothiophene

Fengling Zhang, Tetsuya Noda, Hiroshi Kageyama, Yasuhiko Shirota

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Proceedings Volume 7213, Organic Photonic Materials and Devices XI; 721302 (2009) https://doi.org/10.1117/12.814387
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Electron injection behavior from the magnesium (Mg) electrode into a family of electron-transporting amorphous molecular materials, 5,5'-bis(dimesitylboryl)-2,2'-bithiophene (BMB-2T) and 5,5''-bis(dimesitylboryl)-2,2':5',2''-terthiophene (BMB-3T), in single-layer devices of symmetrical structure was studied. The current density-voltage characteristics of the devices with varying thickness were in agreement with the trap-free space-charge-limited current model. The results indicate that the current is conduction limited and that the contact between BMB-nT (n = 2 and 3) and the Mg electrode is nearly ohmic.

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Fengling Zhang, Tetsuya Noda, Hiroshi Kageyama, and Yasuhiko Shirota "Electron injection behavior from the magnesium electrode into a family of electron-transporting amorphous molecular materials, a,ω-bis(dimesitylboryl)oligothiophene", Proc. SPIE 7213, Organic Photonic Materials and Devices XI, 721302 (12 February 2009); https://doi.org/10.1117/12.814387

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