Stress-induced photoluminescence in porous silicon films

Yuan Ming Huang; Fu-fang Zhou; Bao-gai Zhai

doi:10.1117/12.839344

25 August 2009 Stress-induced photoluminescence in porous silicon films

Yuan Ming Huang, Fu-fang Zhou, Bao-gai Zhai

Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73755H (2009) https://doi.org/10.1117/12.839344
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China

Abstract

The influence of mechanical stresses accumulated in the thin films of porous silicon on the photoluminescence from porous silicon was investigated with micro-Raman spectroscopy. Under the 365 nm excitation, dark red photoluminescence was recorded only along the circular boundary of the silicon/porous silicon film. With micro-Raman spectroscopy, the stresses accumulated in the thin films of porous silicon were qualitatively investigated by measuring the Raman shift on a series spots along the radius of the circular porous silicon film. Our results suggested that a gradient of stress had existed in the film, and the magnitude of stresses increased along the radial direction of the film with the center to the circular film as a starting point. The stress-induced photoluminescence in porous silicon was interpreted in light of the bond-order-length-strength correlation model.

Citation Download Citation

Yuan Ming Huang, Fu-fang Zhou, and Bao-gai Zhai "Stress-induced photoluminescence in porous silicon films", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73755H (25 August 2009); https://doi.org/10.1117/12.839344

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