Electrical characteristics of CuS/ZnO PN heterojunction

Xuemin Qian; Jianxing Fang; Yinglin Song

doi:10.1117/12.835498

24 August 2009 Electrical characteristics of CuS/ZnO PN heterojunction

Xuemin Qian, Jianxing Fang, Yinglin Song

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738126 (2009) https://doi.org/10.1117/12.835498
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

A large area of N-ZnO/P-CuS junction arrays on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The thicknesses of CuS shell are tuned by controlling the times of layer-by-layer deposition cycle. Three samples with different CuS shell thicknesses are fabricated and their J-V characteristics show good rectification behavior. The threshold voltages are about 2.5 V at the voltage scans of ± 3 V. The field emission properties of three samples are inveatigated. The turn-on fields of three samples are 6.15 V/μm, 8.75 V/μm, and 10.59 V/μm, respectively. The threshold fields of three samples are 10.46 V/μm, 13.71 V/μm, and 15.2 V/μm, respectively.

Citation Download Citation

Xuemin Qian, Jianxing Fang, and Yinglin Song "Electrical characteristics of CuS/ZnO PN heterojunction", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738126 (24 August 2009); https://doi.org/10.1117/12.835498

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