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10 December 2009 Source-mask selection using computational lithography: further investigation incorporating rigorous resist models
Sanjay Kapasi, Stewart Robertson, John Biafore, Mark D. Smith
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Proceedings Volume 7520, Lithography Asia 2009; 75200B (2009) https://doi.org/10.1117/12.837201
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
Recent publications have emphasized the criticality of computational lithography in source-mask selection for 32 and 22 nm technology nodes. Lithographers often select the illuminator geometries based on analyzing aerial images for a limited set of structures using computational lithography tools. Last year, Biafore, et al1 demonstrated the divergence between aerial image models and resist models in computational lithography. In a follow-up study2, it was illustrated that optimal illuminator is different when selected based on resist model in contrast to aerial image model. In the study, optimal source shapes were evaluated for 1D logic patterns using aerial image model and two distinct commercial resist models. Physics based lumped parameter resist model (LPM) was used. Accurately calibrated full physical models are portable across imaging conditions compared to the lumped models. This study will be an extension of previous work. Full physical resist models (FPM) with calibrated resist parameters3,4,5,6 will be used in selecting optimum illumination geometries for 1D logic patterns. Several imaging parameters - like Numerical Aperture (NA), source geometries (Annular, Quadrupole, etc.), illumination configurations for different sizes and pitches will be explored in the study. Our goal is to compare and analyze the optimal source-shapes across various imaging conditions. In the end, the optimal source-mask solution for given set of designs based on all the models will be recommended.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Sanjay Kapasi, Stewart Robertson, John Biafore, and Mark D. Smith "Source-mask selection using computational lithography: further investigation incorporating rigorous resist models", Proc. SPIE 7520, Lithography Asia 2009, 75200B (10 December 2009); https://doi.org/10.1117/12.837201
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KEYWORDS
Fiber optic illuminators
Electroluminescence
Artificial intelligence
Computational lithography
Calibration
Optical proximity correction
Logic
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