193nm resist deprotection study from outgassing measurements by TD-GCMS/FID

Raluca Tiron; Samir Derrough; Hervé Fontaine; Sylviane Cetre; Damien Perret; James W. Thackeray; Patrick Paniez

doi:10.1117/12.863150

15 May 2010 193nm resist deprotection study from outgassing measurements by TD-GCMS/FID

Raluca Tiron, Samir Derrough, Hervé Fontaine, Sylviane Cetre, Damien Perret, James W. Thackeray, Patrick Paniez

Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450G (2010) https://doi.org/10.1117/12.863150
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France

Abstract

A methodology was developed in order to characterize the deprotection mechanisms implied in 193nm chemically amplified (CA) resists. This method is based on resist outgassing measurements as a function of exposure dose and bake temperature using Thermal Desorption-Gas Chromatography - Mass Spectrometry / Flame Ionization Detector (TDGCMS/ FID) technique. This approach allows both quantitative and qualitative studies of the outgassing behaviour and was validated from a 193nm model resist representative of CA formulations. In so doing, the identification of outgassed by-products respectively coming from the PAG, from the polymer as well as from the solvent is made possible. In parallel, quantitative results as a function of exposure dose and temperature allowed us to monitor the deprotection process and the solvent evaporation. The quantitative results obtained by this technique were in good agreement with Thermo-Gravimetric Analysis (TGA) results. Such a methodology can be used not only to characterise 193nm resist outgassing during exposure, but also be extended to monitor resist behaviour during implant, thermal treatment, e-beam exposure.

Citation Download Citation

Raluca Tiron, Samir Derrough, Hervé Fontaine, Sylviane Cetre, Damien Perret, James W. Thackeray, and Patrick Paniez "193nm resist deprotection study from outgassing measurements by TD-GCMS/FID", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450G (15 May 2010); https://doi.org/10.1117/12.863150

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