Dr. James W. Thackeray Profile

Dr. James W. Thackeray

Research Fellow

SPIE Involvement:

Author

Area of Expertise:

polymer chemistry , photoresists , lithography , Anti Reflective coatings

Profile Summary

Dr Thackeray was honored in 2017 to become Fellow member of SPIE for his significant service to SPIE and the greater science community, as well as his noteworthy technical achievements in photoresist materials for semiconductor lithography. He has been instrumental in the development of numerous photoresist and antireflective coating materials for ultraviolet (UV), deep-UV, and extreme UV (EUV) lithography. His work developing chemically amplified photoresists and his invention of a KrF-wavelength antireflection coating for lithography were extremely important both commercially and scientifically for the semiconductor industry. Currently, he leads development on the next generation of resist materials for sub-20-nm semiconductor devices that feature low line-edge roughness.

Thackeray has been granted 86 U.S. patents and twice won the Otto Haas Award, the highest award for scientific achievement at Rohm and Haas (now Dow Electronic Materials). Dr Thackeray has a Ph. D in Chemistry from the Massachusetts Institute of Technology. . He is a member of the American Chemical Society (ACS), the Polymeric Materials Science Engineering Division of ACS, and has been member of SPIE for more than 20 years.

Publications (56)

Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Design considerations for chemically amplified EUV resist materials

Emad Aqad, ChoongBong Lee, Suzanne Coley, Ke Yang, Li Cui, Manibarsha Goswami, Bhooshan Popere, Tomas Marangoni, James Cameron, James Thackeray

Proceedings Volume 11609, 116090I (2021) https://doi.org/10.1117/12.2583642

KEYWORDS: Extreme ultraviolet, Polymers, Absorption, Quantum efficiency, Imaging systems, Yield improvement, Systems modeling, Stochastic processes, Modulation, Lithography

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SPIE Journal Paper | 28 January 2021 Open Access

Open Access

Pattern roughness analysis using power spectral density: application and impact in photoresist formulation

Charlotte Cutler, James Thackeray, Peter Trefonas, Dan Millward, Choong Bong Lee, Chris Mack

JM3, Vol. 20, Issue 01, 010901, (January 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.010901

KEYWORDS: Line width roughness, Nanoimprint lithography, Diffusion, Etching, Diffractive optical elements, Photoresist processing, Image analysis, Image processing, Semiconducting wafers, Photoresist materials

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Proceedings Article | 24 March 2020 Presentation

Presentation

Line width roughness reduction strategies utilizing power spectral density analysis (Conference Presentation)

Charlotte Cutler, Dan Millward, Choong-Bong Lee, James Thackeray, John Nelson, Jason DeSisto, Rochelle Rena, Chris Mack

Proceedings Volume 11326, 113260H (2020) https://doi.org/10.1117/12.2551694

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Proceedings Article | 25 March 2019 Presentation + Paper

Presentation + Paper

Roughness power spectral density as a function of aerial image and basic process/resist parameter

Charlotte Cutler, Choong Bong Lee, James Thackeray, John Nelson, Jason DeSisto, Rochelle Rena, Peter Trefonas, Chris Mack

Proceedings Volume 10960, 109600I (2019) https://doi.org/10.1117/12.2515073

KEYWORDS: Line width roughness, Nanoimprint lithography, Diffusion, Diffractive optical elements, Image processing, Photoresist processing, Temperature metrology, Image analysis, Image resolution, Lithography

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Proceedings Article | 25 March 2019 Presentation + Paper

Presentation + Paper

Evolution of lithographic materials enabling the semiconductor industry

James Thackeray, Cheng Bai Xu, James Cameron

Proceedings Volume 10960, 1096013 (2019) https://doi.org/10.1117/12.2515895

KEYWORDS: Etching, Lithography, System on a chip, Optical lithography, Resistance, Reflectivity, Photoresist materials, Critical dimension metrology, Polymers, Argon

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Proceedings Article | 23 March 2018 Presentation + Paper

Presentation + Paper

Roughness power spectral density as a function of resist parameters and its impact through process

Charlotte Cutler, James Thackeray, Jason DeSisto, John Nelson, Choong-Bong Lee, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua Kaitz, Rochelle Rena, Chris Mack

Proceedings Volume 10587, 1058707 (2018) https://doi.org/10.1117/12.2297690

KEYWORDS: Line width roughness, Scanning electron microscopy

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Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

Embedded top-coat for reducing the effect out of band radiation in EUV lithography

Ke Du, Meiliana Siauw, David Valade, Marek Jasieniak, Nico Voelcker, Peter Trefonas, Jim Thackeray, Idriss Blakey, Andrew Whittaker

Proceedings Volume 10146, 101460D (2017) https://doi.org/10.1117/12.2270480

KEYWORDS: Polymers, Polymerization, Extreme ultraviolet lithography, Electron beam lithography, Photoresist materials, Polymer thin films, Extreme ultraviolet, Semiconducting wafers, Refractive index, Absorbance

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Proceedings Article | 25 March 2016 Paper

Paper

Additive chemistry and distributions in NTD photoresist thin films

James Thackeray, Chang-Young Hong, Michael Clark

Proceedings Volume 9779, 97791B (2016) https://doi.org/10.1117/12.2219743

KEYWORDS: Photoresist materials, Lithography, Thin films, Chemistry, Molecules, Diffusion, Materials processing, Photoresist processing, Optical lithography, Optical proximity correction, Ions, Polymers

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Proceedings Article | 21 March 2016 Paper

Paper

Systematic investigation of the synthesis, characterization and switching mechanism of metal oxide nanoparticle resists

Meiliana Siauw, Ke Du, David Valade, Peter Trefonas, James Thackeray, Andrew Whittaker, Idriss Blakey

Proceedings Volume 9779, 97790J (2016) https://doi.org/10.1117/12.2219638

KEYWORDS: Nanoparticles, Metals, Oxides, Extreme ultraviolet lithography, Photoresist materials, Optical lithography, Electron beam lithography, Scanning electron microscopy, Materials processing, Photoresist developing, Particles, Zirconium, Hafnium, Transmission electron microscopy

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Proceedings Article | 17 April 2014 Paper

Paper

Understanding EUV resist mottling leading to better resolution and linewidth roughness

James Thackeray, James Cameron, Vipul Jain, Paul LaBeaume, Suzanne Coley, Owendi Ongayi, Mike Wagner, John Biafore, Jun Sung Chun

Proceedings Volume 9048, 904807 (2014) https://doi.org/10.1117/12.2046392

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Line width roughness, Diffusion, Carbon, Lithography, Semiconducting wafers, Line edge roughness, Interferometry, Surface roughness

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Proceedings Article | 27 March 2014 Paper

Paper

How to design a good photoresist solvent package using solubility parameters and high-throughput research

Michael Tate, Charlotte Cutler, Mike Sakillaris, Michael Kaufman, Thomas Estelle, Carol Mohler, Chris Tucker, Jim Thackeray

Proceedings Volume 9051, 90510R (2014) https://doi.org/10.1117/12.2045974

KEYWORDS: Polymers, Photoresist materials, Hydrogen, Process modeling, Statistical analysis, Semiconductors, Magnesium, Optimization (mathematics), Photoresist developing, Materials processing

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SPIE Journal Paper | 16 December 2013

Bottom-up/top-down, high-resolution, high-throughput lithography using vertically assembled block bottle brush polymers

Peter Trefonas, James Thackeray, Guorong Sun, Sangho Cho, Corrie Clark, Stanislav Verkhoturov, Michael Eller, Ang Li, Adriana Pavia-Sanders, Emile Schweikert, Karen Wooley

JM3, Vol. 12, Issue 04, 043006, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.043006

KEYWORDS: Polymers, Lithography, Fluorine, Molecules, Electron beam lithography, Atomic force microscopy, Polymerization, Ions, Electron beams, Diffusion

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We describe a novel deterministic bottom-up/top-down approach to sub-30-nm photolithography using a film composed of assembled block brush polymers of highly uniform composition and chain length. The polymer architecture consists of a rigid backbone of polymerized norbornene, each linked to flexible short side brush chains. The resultant bottle brush topology has a cylindrical shape with short brush chains arranged concentrically around the backbone, in which the cylinder radius is determined by the number of monomers within the brush fragment, while the cylinder length is determined by the degree of backbone polymerization. The modularity of the synthetic system allows a wide diversity of lithographically useful monomers, sequencing, dimension, and property variation. Sequential grafting of presynthesized blocks allows for facile formation of either concentric or lengthwise block copolymers. Placement of brush chains of different compositions along different regions of the cylinder, along with variation of the relative concentric and lengthwise dimensions, provides mechanisms to align and control placement of the cylinders. These polymers are compatible with photoacid generators and crosslinker functionality. Our results are consistent with a model that the bottle brush polymers assemble (bottom-up) in the film to yield a forest of vertically arranged cylindrical block brush polymers, with the film thickness determined by the coherence lengths of the cylinders. Subsequent imaging via electron beam (e-beam) or optical radiation yields a (top-down) mechanism for acid catalyzed crosslinking of adjacent cylinders. Uncrosslinked cylinders are removed in developer to yield negative photoresist patterns. Exposure doses are very low and throughputs are amenable to the requirements of extreme ultraviolet lithography. The limiting resolution with e-beam exposure is potentially about two cylinder diameters width (<8 nm ), with the smallest observed patterns approaching 10 nm.

Proceedings Article | 1 April 2013 Paper

Paper

Effect of leaving group design on EUV lithography performance

Owendi Ongayi, Vipul Jain, Suzanne Coley, David Valeri, Amy Kwok, Dung Quach, Mike Wagner, Jim Cameron, Jim Thackeray

Proceedings Volume 8679, 867907 (2013) https://doi.org/10.1117/12.2011600

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist materials, Radiation effects, Lithography, Neodymium, Silicon, Spectroscopy, Polymer thin films

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Proceedings Article | 29 March 2013 Paper

Paper

Bottom-up/top-down high resolution, high throughput lithography using vertically assembled block bottle brush polymers

Peter Trefonas, James Thackeray, Guorong Sun, Sangho Cho, Corrie Clark, Stanislav Verkhoturov, Michael Eller, Ang Li, Adriana Pavía-Jiménez, Emile Schweikert, Karen Wooley

Proceedings Volume 8682, 86820H (2013) https://doi.org/10.1117/12.2014528

KEYWORDS: Polymers, Lithography, Neodymium, Molecules, Fluorine, Ions, Polymerization, Atomic force microscopy, Electron beam lithography, Extreme ultraviolet lithography

Read Abstract +

We describe a novel deterministic bottom-up / top-down approach to sub-30 nm photolithography using a film composed of assembled block brush polymers of highly uniform composition and chain length. The polymer architecture consists of a rigid backbone of polymerized norbornene, each linked to flexible short side brush chains. The resultant ‘bottle brush’ topology has a cylindrical shape with short brush chains arranged concentrically around the backbone, in which the cylinder radius is determined by the number of monomers within the brush fragment, while the cylinder length is determined by the degree of backbone polymerization. The modularity of the synthetic system allows a wide diversity of lithographically useful monomers, sequencing, dimension and property variation. Sequential grafting of pre-synthesized blocks allows for facile formation of either concentric or lengthwise block copolymers. Placement of brush chains of different compositions along different regions of the cylinder, along with variation of the relative concentric and lengthwise dimensions, provides mechanisms to align and control placement of the cylinders. These polymers are compatible with photoacid generators (PAGs) and crosslinker functionality. Our results are consistent with a model that the bottle brush polymers assemble (bottom-up) in the film to yield a ‘forest’ of vertically arranged cylindrical block brush polymers, with the film thickness determined by the coherence lengths of the cylinders. Subsequent imaging via electron beam (EB or ebeam) or optical radiation yields a (top-down) mechanism for acid catalyzed crosslinking of adjacent cylinders. Uncrosslinked cylinders are removed in developer to yield negative photoresist patterns. Exposure doses are very low and throughputs are amenable to the requirements of Extreme Ultraviolet (EUV) lithography. The limiting resolution with ebeam exposure is potentially about two cylinder diameters width (< 8 nm), with the smallest observed patterns approaching 10 nm.

Proceedings Article | 29 March 2013 Paper

Paper

Progress in resolution, sensitivity, and critical dimensional uniformity of EUV chemically amplified resists

James Thackeray, James Cameron, Vipul Jain, Paul LaBeaume, Suzanne Coley, Owendi Ongayi, Mike Wagner, Aaron Rachford, John Biafore

Proceedings Volume 8682, 868213 (2013) https://doi.org/10.1117/12.2011565

KEYWORDS: Extreme ultraviolet, Diffusion, Extreme ultraviolet lithography, Polymers, Chemically amplified resists, Line width roughness, Stochastic processes, Lithography, Photomasks, Electrodes

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Proceedings Article | 23 March 2012 Paper

Paper

Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

James Cameron, Jim Thackeray, Jin Wuk Sung, Suzanne Coley, Vipul Jain, Owendi Ongayi, Mike Wagner, Paul LaBeaume, Amy Kwok, David Valeri, Marie Hellion, Béatrice Icard, Bernard Dal'zotto, Claire Sourd, Laurent Pain

Proceedings Volume 8322, 83222F (2012) https://doi.org/10.1117/12.916598

KEYWORDS: Extreme ultraviolet, Electron beam lithography, Extreme ultraviolet lithography, Lithography, Polymers, Semiconductors, Line width roughness, Maskless lithography, Photomasks, EUV optics

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Proceedings Article | 23 March 2012 Paper

Paper

High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Owendi Ongayi, Matthew Christianson, Matthew Meyer, Suzanne Coley, David Valeri, Amy Kwok, Mike Wagner, Jim Cameron, Jim Thackeray

Proceedings Volume 8322, 83220T (2012) https://doi.org/10.1117/12.916482

KEYWORDS: Polymers, Extreme ultraviolet, Absorption, Line width roughness, Extreme ultraviolet lithography, Polymer thin films, Chromophores, Electrons, Molecules, Photoresist materials

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Proceedings Article | 20 March 2012 Paper

Paper

Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates

James Thackeray, James Cameron, Michael Wagner, Suzanne Coley, Owendi Ongayi, Warren Montgomery, Dave Lovell, John Biafore, Vidhya Chakrapani, Akiteru Ko

Proceedings Volume 8325, 832508 (2012) https://doi.org/10.1117/12.917807

KEYWORDS: Extreme ultraviolet, Silicon, Line width roughness, Diffusion, Polymers, Lithography, Extreme ultraviolet lithography, Etching, Mirrors, Absorption

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SPIE Journal Paper | 1 July 2011

Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study

Chris Mack, James Thackeray, John Biafore, Mark Smith

JM3, Vol. 10, Issue 03, 033019, (July 2011) https://doi.org/10.1117/12.10.1117/1.3631753

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Extreme ultraviolet, Monte Carlo methods, Absorption, Photoresist materials, Quantum efficiency, Ionization, Line edge roughness, Statistical modeling

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SPIE Journal Paper | 1 July 2011

Materials challenges for sub-20-nm lithography

James Thackeray

JM3, Vol. 10, Issue 03, 033009, (July 2011) https://doi.org/10.1117/12.10.1117/1.3616067

KEYWORDS: Extreme ultraviolet, Lithography, Polymers, Diffusion, Line width roughness, Extreme ultraviolet lithography, Absorption, Chemically amplified resists, Yield improvement, Etching

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Proceedings Article | 16 April 2011 Paper

Paper

Materials challenges for sub-20nm lithography

James Thackeray

Proceedings Volume 7972, 797204 (2011) https://doi.org/10.1117/12.882958

KEYWORDS: Extreme ultraviolet, Polymers, Diffusion, Lithography, Line width roughness, Extreme ultraviolet lithography, Absorption, Chemically amplified resists, Yield improvement, Etching

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Proceedings Article | 7 April 2011 Paper

Paper

Stochastic exposure kinetics of EUV photoresists: a simulation study

Chris Mack, James Thackeray, John Biafore, Mark Smith

Proceedings Volume 7969, 796919 (2011) https://doi.org/10.1117/12.881066

KEYWORDS: Extreme ultraviolet lithography, Stochastic processes, Absorption, Extreme ultraviolet, Monte Carlo methods, Quantum efficiency, Ionization, Photoresist materials, Line edge roughness, Polymers

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Proceedings Article | 7 April 2011 Paper

Paper

Impact of polymerization process on OOB on lithographic performance of a EUV resist

Vipul Jain, Suzanne Coley, Jung June Lee, Matthew Christianson, Daniel Arriola, Paul LaBeaume, Maria Danis, Nicolas Ortiz, Su-Jin Kang, Michael Wagner, Amy Kwok, David Valeri, James Thackeray

Proceedings Volume 7969, 796912 (2011) https://doi.org/10.1117/12.879487

KEYWORDS: Polymers, Polymerization, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Lithography, Spectroscopy, Radiation effects, Photoresist processing, Electronic support measures

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Proceedings Article | 15 May 2010 Paper

Paper

193nm resist deprotection study from outgassing measurements by TD-GCMS/FID

Raluca Tiron, Samir Derrough, Hervé Fontaine, Sylviane Cetre, Damien Perret, James Thackeray, Patrick Paniez

Proceedings Volume 7545, 75450G (2010) https://doi.org/10.1117/12.863150

KEYWORDS: Semiconducting wafers, Polymers, Diffusion, Ionization, Sensors, Molecules, Statistical analysis, Chromatography, Spectroscopy, Lithography

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Proceedings Article | 26 March 2010 Paper

Paper

Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists

Samir Derrough, Raluca Tiron, Damien Perret, James Thackeray, Claire Sourd, Patrick Paniez

Proceedings Volume 7639, 763937 (2010) https://doi.org/10.1117/12.846087

KEYWORDS: Diffusion, Lithography, Temperature metrology, Chemically amplified resists, Photoresist processing, Glasses, Line edge roughness, Systems modeling, Thermal analysis, Complex systems

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Proceedings Article | 1 April 2009 Paper

Paper

Statistical simulation of resist at EUV and ArF

John Biafore, Mark Smith, Chris Mack, James Thackeray, Roel Gronheid, Stewart Robertson, Trey Graves, David Blankenship

Proceedings Volume 7273, 727343 (2009) https://doi.org/10.1117/12.813551

KEYWORDS: Photons, Extreme ultraviolet, Quantum efficiency, Absorption, Line width roughness, Stochastic processes, Extreme ultraviolet lithography, Monte Carlo methods, Data modeling, Lithography

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Proceedings Article | 28 March 2008 Paper

Paper

Film quantum yields of EUV and ultra-high PAG photoresists

Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard

Proceedings Volume 6921, 69211I (2008) https://doi.org/10.1117/12.774099

KEYWORDS: Quantum efficiency, Extreme ultraviolet lithography, Photoresist materials, Extreme ultraviolet, X-rays, Absorbance, Photons, Coating, Reflectometry, Line edge roughness

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Proceedings Article | 21 March 2008 Paper

Paper

Resolution, LER, and sensitivity limitations of photoresists

Gregg Gallatin, Patrick Naulleau, Dimitra Niakoula, Robert Brainard, Elsayed Hassanein, Richard Matyi, Jim Thackeray, Kathleen Spear, Kim Dean

Proceedings Volume 6921, 69211E (2008) https://doi.org/10.1117/12.772763

KEYWORDS: Line edge roughness, Data modeling, Photoresist materials, Extreme ultraviolet, Lithography, Image resolution, Scanning electron microscopy, Yield improvement, Photoresist developing, Photoresist processing

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Proceedings Article | 5 April 2007 Paper

Paper

Impact of acid diffusion length on resist LER and LWR measured by CD-AFM and CD-SEM

J. Foucher, A. Pikon, C. Andes, J. Thackeray

Proceedings Volume 6518, 65181Q (2007) https://doi.org/10.1117/12.712186

KEYWORDS: Line edge roughness, Atomic force microscopy, Line width roughness, Scanning electron microscopy, Critical dimension metrology, Diffusion, Photoresist materials, Lithography, 3D modeling, Etching

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Proceedings Article | 23 March 2007 Paper

Paper

Hybrid optical: electron-beam resists

D. Lennon, S. Spector, T. Fedynyshyn, T. Lyszczarz, M. Rothschild, J. Thackeray, K. Spear-Alfonso

Proceedings Volume 6519, 65190H (2007) https://doi.org/10.1117/12.714370

KEYWORDS: Semiconducting wafers, Wafer-level optics, Electron beam lithography, Polymethylmethacrylate, Hybrid optics, Photoresist processing, Lithography, Chemically amplified resists, Head-mounted displays, Photoresist materials

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Proceedings Article | 15 March 2007 Paper

Paper

Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography

James Thackeray, Roger Nassar, Robert Brainard, Dario Goldfarb, Thomas Wallow, Yayi Wei, Jeff Mackey, Patrick Naulleau, Bill Pierson, Harun Solak

Proceedings Volume 6517, 651719 (2007) https://doi.org/10.1117/12.712981

KEYWORDS: Line edge roughness, Chemically amplified resists, Extreme ultraviolet lithography, Diffusion, Cadmium sulfide, Extreme ultraviolet, Lithography, Polymers, Standards development, Semiconducting wafers

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Proceedings Article | 29 March 2006 Paper

Paper

A novel switchable BARC (SBARC) and process to improve pattern collapse and defect control

Ching Yu Chang, D. C. Yu, J. H. Chen, John C. H. Lin, Burn Lin, James Thackeray, Vaishali Vohra, Gerald Wayton, Tomoki Kurihara

Proceedings Volume 6153, 61530M (2006) https://doi.org/10.1117/12.658416

KEYWORDS: Satellites, Water, Etching, Adhesives, Capillaries, Polymers, Digital watermarking, Photoresist processing, Lithography, Switches

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Proceedings Article | 12 June 2003 Paper

Paper

Mechanistic understanding of post-etch roughness in 193-nm photoresists

Young Bae, George Barclay, Patrick Bolton, Robert Kavanagh, Lujia Bu, Tatum Kobayashi, Tim Adams, Nick Pugliano, James Thackeray

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483761

KEYWORDS: Etching, Photoresist materials, Oxides, Monochromatic aberrations, Polymers, Resistance, Atomic force microscopy, Chemical analysis, Lithography, Spatial light modulators

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Proceedings Article | 24 July 2002 Paper

Paper

Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers

Robert Kavanagh, George Orsula, Marie Hellion, George Barclay, Stefan Caporale, Nick Pugliano, James Thackeray, Benedicte Mortini

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474212

KEYWORDS: Polymers, Lithography, Line edge roughness, Prototyping, Logic, Data modeling, Manufacturing, Etching, Photoresist processing, Photoresist materials

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Proceedings Article | 24 July 2002 Paper

Paper

Ultrathin DUV resists for logic applications

James Thackeray, James Cameron, Michael Cronin, Wesley Brykailo, Doris Kang

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474274

KEYWORDS: Lithography, Logic, Deep ultraviolet, Semiconducting wafers, Systems modeling, Logic devices, Etching, Thin films, Photomasks, Optics manufacturing

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Proceedings Article | 24 August 2001 Paper

Paper

Design and performance of photoresist materials for ArF lithography

Hyun-Woo Kim, Dong-Won Jung, Sook Lee, Sang-Jun Choi, Sang-Gyun Woo, Robert Kavanagh, George Barclay, Robert Blacksmith, Doris Kang, Gerd Pohlers, James Cameron, Joe Mattia, Stefan Caporale, Thomas Penniman, Lori Joesten, James Thackeray

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436908

KEYWORDS: Etching, Polymers, Monochromatic aberrations, Lithography, Line edge roughness, Resistance, Photoresist materials, Photoresist processing, Absorbance, Resist chemistry

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Proceedings Article | 23 June 2000 Paper

Paper

Thick-film positive DUV photoresist for implant layer application

J. Michael Mori, James Thackeray, Cheng-Bai Xu, George Orsula, Elizabeth Prettyman, Rosemary Bell, Robert Routh

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388371

KEYWORDS: Ultraviolet radiation, Lithography, Photoresist materials, Deep ultraviolet, Semiconducting wafers, Coating, Electroluminescence, Photoresist processing, Silicon, Annealing

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Proceedings Article | 11 June 1999 Paper

Paper

Improved resolution with advanced negative DUV photoresist with 0.26N capability

Gregory Prokopowicz, Jacque Georger, Eyad Ayyash, James Thackeray, William Brunsvold, Laura Kosbar, Ali Afzali-Kushaa, Jeffrey Gelorme

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350181

KEYWORDS: Deep ultraviolet, Lithography, Phase shifts, Bridges, Polymers, Photoresist materials, Manufacturing, Signal to noise ratio, Reticles, Temperature metrology

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Proceedings Article | 29 June 1998 Paper

Paper

Development of DUV resist formulations with excellent performance on metal substrates

Martha Rajaratnam, James Cameron, Jacque Georger, Doris Kang, Gregory Prokopowicz, Roger Sinta, James Thackeray

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312468

KEYWORDS: Tin, Polymers, Etching, Metals, Deep ultraviolet, Resistance, Interfaces, Chemical analysis, Lithography, Photoresist materials

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Proceedings Article | 7 July 1997 Paper

Paper

Reactivity and kinetic parameters for UVIIHS

Gregory Wallraff, Juliann Opitz, William Hinsberg, Frances Houle, James Thackeray, Theodore Fedynyshyn, Doris Kang, Martha Rajaratnam

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275851

KEYWORDS: Systems modeling, Polymers, Chemistry, Stochastic processes, Deep ultraviolet, Catalysis, Contamination, Semiconducting wafers, Chemical analysis, Atmospheric modeling

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Proceedings Article | 7 July 1997 Paper

Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William Brunsvold, Fred Buehrer, Ronald DellaGuardia, David Dobuzinsky, Timothy Farrell, Hok Ho, Ahmad Katnani, Robin Keller, James Marsh, Paul Muller, Ronald Nunes, Hung Ng, James Oberschmidt, Michael Pike, Deborah Ryan, Tina Cotler-Wagner, Ron Schulz, Hiroshi Ito, Donald Hofer, Gregory Breyta, Debra Fenzel-Alexander, Gregory Wallraff, Juliann Opitz, James Thackeray, George Barclay, James Cameron, Tracy Lindsay, Michael Cronin, Matthew Moynihan, Sassan Nour, Jacque Georger, Mike Mori, Peter Hagerty, Roger Sinta, Thomas Zydowsky

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275830

KEYWORDS: Semiconducting wafers, Photoresist materials, Etching, Polymers, Resistance, Lithography, Silicon, Glasses, Annealing, Photoresist processing

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Proceedings Article | 14 June 1996 Paper

Paper

Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)

Will Conley, Gregory Breyta, William Brunsvold, Richard Di Pietro, Donald Hofer, Steven Holmes, Hiroshi Ito, Ronald Nunes, Gabrielle Fichtl, Peter Hagerty, James Thackeray

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241840

KEYWORDS: Photoresist materials, Semiconducting wafers, Etching, Polymers, Lithography, Silicon, Photoresist developing, Deep ultraviolet, Head-mounted displays, Antireflective coatings

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Proceedings Article | 27 May 1996 Paper

Paper

Development of two new positive DUV photoresists for use with direct-write e-beam lithography

David Mancini, Douglas Resnick, Kevin Nordquist, William Dauksher, James Thackeray, Mark McCord

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240461

KEYWORDS: Ultraviolet radiation, Semiconducting wafers, Deep ultraviolet, Etching, Electron beam lithography, Photoresist materials, Lithography, Silicon, Photoresist processing, Polymers

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Proceedings Article | 9 June 1995 Paper

Paper

DUV positive resist system designed for Micrascan use

James Thackeray, Timothy Adams, Michael Cronin, Theodore Fedynyshyn, J. Michael Mori, John Petersen, Roger Sinta

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210373

KEYWORDS: Deep ultraviolet, Polymers, Absorbance, Lithography, Diffusion, Tin, Temperature metrology, Excimer lasers, Photoresist processing, Semiconducting wafers

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Proceedings Article | 9 June 1995 Paper

Paper

Characterization and modeling of a positive-acting chemically amplified resist

John Petersen, Chris Mack, James Thackeray, Roger Sinta, Theodore Fedynyshyn, J. Michael Mori, Jeff Byers, Daniel Miller

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210377

KEYWORDS: Diffusion, Data modeling, Data conversion, Chemically amplified resists, Lithography, Photoresist processing, Polymers, Semiconducting wafers, Amplifiers, Temperature metrology

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Proceedings Article | 16 May 1994 Paper

Paper

Investigation of onium salt type photoacid generators in positive DUV resist systems

Michael Cronin, Timothy Adams, Theodore Fedynyshyn, Jacque Georger, J. Michael Mori, Roger Sinta, James Thackeray

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175339

KEYWORDS: Diffusion, Deep ultraviolet, Lithography, Polymers, Matrices, Semiconducting wafers, Chemistry, Picosecond phenomena, Information operations, Manufacturing

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Proceedings Article | 16 May 1994 Paper

Paper

Effect of resin molecular weight on the resolution of DUV negative photoresists

James Thackeray, George Orsula, Mark Denison

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175332

KEYWORDS: Deep ultraviolet, Polymers, Photoresist materials, Lithography, Semiconducting wafers, Bridges, Silicon, Silicon films, Chromatography, Molecular bridges

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Proceedings Article | 24 June 1993 Paper

Paper

Film life enhancement of chemically amplified electron-beam resists

Theodore Fedynyshyn, Michael Cronin, James Thackeray

Proceedings Volume 1924, (1993) https://doi.org/10.1117/12.146533

KEYWORDS: Electron beams, Semiconducting wafers, Silica, Chemically amplified resists, Mask making, Nitrogen, Contamination, Coating, Humidity, Photomasks

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Proceedings Article | 1 June 1992 Paper

Paper

Silylation processes for 193-nm lithography using acid-catalyzed resists

Mark Hartney, James Thackeray

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59768

KEYWORDS: Signal to noise ratio, Photoresist processing, Pulsed laser operation, Liquids, Lithography, Thermal effects, Polymers, Ions, Plasma, Astatine

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Proceedings Article | 1 June 1992 Paper

Paper

Comparative study of deep-UV resist processes for 0.35-um technology

Francoise Vinet, Thierry Mourier, Olivier Joubert, Michel Heitzmann, Charles Le Cornec, Michel Pons, James Thackeray, George Orsula

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59746

KEYWORDS: Etching, Photoresist processing, Deep ultraviolet, Lithography, Antireflective coatings, Reactive ion etching, Plasma, Ions, Reflectivity, Absorption

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Proceedings Article | 1 June 1992 Paper

Paper

Toward the development of a stable chemically amplified DUV positive photoresist

James Thackeray, Diane Canistro, Mark Denison, Joseph Ferrari, Richard Hemond, David Medeiros, George Orsula, Edward Pavelchek, Martha Rajaratnam, Roger Sinta

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59722

KEYWORDS: Deep ultraviolet, Photoresist materials, Photoresist developing, Absorbance, Transparency, Chemically amplified resists, Lithography, Temperature metrology, Excimer lasers, Industrial chemicals

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Proceedings Article | 1 July 1991 Paper

Paper

Simulations of bar printing over a MOSFET device using i-line and deep-UV resists

Eytan Barouch, Uwe Hollerbach, Steven Orszag, Charles Szmanda, James Thackeray

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44805

KEYWORDS: Deep ultraviolet, Diffusion, Printing, Field effect transistors, Molecules, Computer simulations, Numerical simulations, Photoresist processing, Optical lithography, Numerical analysis

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Proceedings Article | 1 June 1991 Paper

Paper

Dissolution inhibition mechanism of ANR photoresists: crosslinking vs. -OH site consumption

James Thackeray, George Orsula, Martha Rajaratnam, Roger Sinta, Daniel Herr, Edward Pavelchek

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46357

KEYWORDS: Polymers, Photoresist materials, Deep ultraviolet, Excimer lasers, Chromatography, Lithography, Photoresist developing, Oxygen, Oxides, Silicon

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Proceedings Article | 1 June 1990 Paper

Paper

Chemically amplified resists for I-line and G-line applications

Amanda Berry, Wayne Feely, Stephen Thompson, Gary Calabrese, Roger Sinta, Angelo Lamola, James Thackeray, George Orsula

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20113

KEYWORDS: Silver, Near ultraviolet, Lithography, Luminescence, Phosphorescence, Absorption, Absorbance, Chemically amplified resists, Spectroscopy, Oxidation

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Proceedings Article | 1 June 1990 Paper

Paper

ANR photoresist process optimization at 248 nm

Christophe Pierrat, Francoise Vinet, Thierry Mourier, James Thackeray

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20123

KEYWORDS: Deep ultraviolet, Photoresist processing, Lithography, Electron beam lithography, Semiconducting wafers, Photoresist materials, Absorbance, Photomasks, Etching, Excimer lasers

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Proceedings Article | 1 June 1990 Paper

Paper

Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist

Siddhartha Das, James Thackeray, Masayuki Endo, Joseph Langston, Henry Gaw

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20088

KEYWORDS: Signal to noise ratio, Image processing, Photoresist processing, Critical dimension metrology, Scanning electron microscopy, Absorbance, Temperature metrology, Aluminium phosphide, Chemistry, Optical properties

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Showing 5 of 56 publications

Conference Committee Involvement (6)

Advances in Patterning Materials and Processes XXXVI

25 February 2019 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXV

27 February 2018 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIV

28 February 2017 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIII

29 February 2016 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXII

24 February 2015 | San Jose, California, United States

Showing 5 of 6 Conference Committees

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