Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers

Robert J. Kavanagh; George W. Orsula; Marie Hellion; George G. Barclay; Stefan Caporale; Nick Pugliano; James W. Thackeray; Benedicte P. Mortini

doi:10.1117/12.474212

24 July 2002 Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers

Robert J. Kavanagh, George W. Orsula, Marie Hellion, George G. Barclay, Stefan Caporale, Nick Pugliano, James W. Thackeray, Benedicte P. Mortini

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474212
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

ArF lithography is the current ramp-up technology for next generation devices. However, some manufacturing issues still remain when considering the resist design for the most advanced processes. Several polymer platforms have been proposed, among them, Methacrylate, CycloOlefin-alt Maleic Anhydride, and even pure Cyclo-Olefin. More recently, Vinyl-Ether Maleic Anhydride (VEMA) polymers have demonstrated potential in terms of both lithographic properties and etch capabilities. In this paper, the evaluation of some advanced samples of VEMA resists for 120nm and sub-120 nm gate applications will be discussed. The various criteria investigated for this study were; focus and exposure latitude for 120 and 100 nm lines (1/1.5 L/S to isolated lines), Iso-Dense bias, Line End Shortening (LES), Line Edge Roughness (LER), masking linearity, BARC compatibility, sensitivity to PEB temperature and electron beam, and finally etch resistance. Additionally some process optimizations were tested in order to minimize Iso-Dense Bias and the LER of the resists (See figure 1). In fact, this latter parameter has been a major focus of this work in improving the VEMA resist chemistry since its introduction and preparing it for device manufacture. The results obtained when varying parameters such as resist formulation, development conditions will be reported and so will demonstrate the current maturity of the most advanced VEMA samples.

Citation Download Citation

Robert J. Kavanagh, George W. Orsula, Marie Hellion, George G. Barclay, Stefan Caporale, Nick Pugliano, James W. Thackeray, and Benedicte P. Mortini "Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474212

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Polymers

Lithography

Line edge roughness

Prototyping

Logic

Data modeling

Manufacturing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years