Statistical simulation of resist at EUV and ArF

John J. Biafore; Mark D. Smith; Chris A. Mack; James W. Thackeray; Roel Gronheid; Stewart A. Robertson; Trey Graves; David Blankenship

doi:10.1117/12.813551

1 April 2009 Statistical simulation of photoresists at EUV and ArF

John J. Biafore, Mark D. Smith, Chris A. Mack, James W. Thackeray, Roel Gronheid, Stewart A. Robertson, Trey Graves, David Blankenship

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 727343 (2009) https://doi.org/10.1117/12.813551
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Requirements of resist modeling strategies for EUV and low-k1 ArF nanolithography continue to become more stringent. Resist designers are consistently faced with the task of reducing exposure dose and line roughness while simultaneously improving exposure latitude, depth-of-focus and ultimate resolution. In this work, we briefly discuss a next-generation resist model for the prediction of statistical resist responses such as line-edge roughness, line-width roughness and CD variability, as well as base lithographic responses such as exposure latitude. The model's parameterized fit to experimental data from a state-of-the art polymer-bound PAG resist irradiated at ArF and EUV will be shown. The probabilistic computation of acid generation at ArF and EUV will be discussed. The factors influencing the hypothesized primary cause of resist roughness, acid shot noise, are discussed.

Citation Download Citation

John J. Biafore, Mark D. Smith, Chris A. Mack, James W. Thackeray, Roel Gronheid, Stewart A. Robertson, Trey Graves, and David Blankenship "Statistical simulation of photoresists at EUV and ArF", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727343 (1 April 2009); https://doi.org/10.1117/12.813551

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