Development of EUV resists based on various new materials

Hiroaki Oizumi; Kazuyuki Matsumaro; Julius Santillan; Gousuke Shiraishi; Koji Kaneyama; Kentaro Matsunaga; Toshiro Itani

doi:10.1117/12.846429

25 March 2010 Development of EUV resists based on various new materials

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Gousuke Shiraishi, Koji Kaneyama, Kentaro Matsunaga, Toshiro Itani

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390R (2010) https://doi.org/10.1117/12.846429
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

This paper summarizes the development of EUV resists based on various new materials: the lithographic evaluation results of EUV resists from resist material manufacturers using the small field exposure tool (SFET). We discuss the screening results of new resin materials based on calix[4]resorcinarene, "Noria" and fullerene.

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Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Gousuke Shiraishi, Koji Kaneyama, Kentaro Matsunaga, and Toshiro Itani "Development of EUV resists based on various new materials", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390R (25 March 2010); https://doi.org/10.1117/12.846429

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