Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model

Stewart A. Robertson; John J. Biafore; Mark D. Smith; Michael T. Reilly; Jerome Wandell

doi:10.1117/12.846539

25 March 2010 Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model

Stewart A. Robertson, John J. Biafore, Mark D. Smith, Michael T. Reilly, Jerome Wandell

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763934 (2010) https://doi.org/10.1117/12.846539
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A recently developed stochastic resist model, implemented in the PROLITH X3.1 lithography simulation tool, is fitted to experimental data for a commercially available immersion ArF photoresist, EPIC 2013 (Dow Electronic Materials). Calibration is performed using the mean CD and LWR values through focus and dose for three line/space features of varying pitch (dense, semi-dense and isolated). An unweighted Root Mean Squared Error (RMSE) of approximately 1.6 nm is observed when the calibrated model is compared to the experimental data. Although the model is calibrated only to mean CD and LWR values, it is able to accurately predict highly accurate CDU distributions at fixed focus and dose conditions for 1D and 2D (line end shortening) pattern. It is also shown how the stochastic model can be used to describe the bridging behavior often observed at marginal focus and exposure conditions.

Citation Download Citation

Stewart A. Robertson, John J. Biafore, Mark D. Smith, Michael T. Reilly, and Jerome Wandell "Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763934 (25 March 2010); https://doi.org/10.1117/12.846539

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