Paper
26 May 2010 E-beam writing time improvement for inverse lithography technology mask for full-chip
Author Affiliations +
Abstract
Inverse Lithography Technology (ILT) is becoming one of the strong candidates for 32nm and below. ILT masks provide significantly better litho performance than traditional OPC masks. To enable ILT for production as one of the leading candidates for low-k1 lithography, one major task to overcome is mask manufacturability including mask data fracturing, MRC constraints, writing time, and inspection. In prior publications[4,5], it has been shown that the Inverse Synthesizer (ISTM) product has the capability to adjust for mask complexity to make it more manufacturable while maintaining the significant litho gains of nearly ideal ILT mask. The production readiness of ILT has been demonstrated at full-chip level. To fully integrate ILT mask into production, a number of areas were investigated to further reduce ILT mask complexity without compromising too much of process window. These areas include flexible controls of SRAF placements with respect to local feature sizes, separate control of Manhattan mask segment length of main and SRAF features, topology based variable segmentation length, and jog alignment. The impact of these approaches on e-beam mask writing time and lithography performance is presented in the paper.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guangming Xiao, Dong Hwan Son, Tom Cecil, Dave Irby, David Kim, Ki-Ho Baik, Byung-Gook Kim, SungGon Jung, Sung Soo Suh, and HanKu Cho "E-beam writing time improvement for inverse lithography technology mask for full-chip", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481T (26 May 2010); https://doi.org/10.1117/12.867995
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
SRAF

Photomasks

Image segmentation

Control systems

Lithography

Critical dimension metrology

Stereolithography

Back to Top