InGaP/GaAs/InGaAs triple junction concentrators using bi-facial epigrowth

Philip Chiu; Steven Wojtczuk; Xuebing Zhang; Daniel Derkacs; Chris Harris; Daryl Pulver; Mike Timmons

doi:10.1117/12.862914

24 August 2010 InGaP/GaAs/InGaAs triple junction concentrators using bi-facial epigrowth

Philip Chiu, Steven Wojtczuk, Xuebing Zhang, Daniel Derkacs, Chris Harris, Daryl Pulver, Mike Timmons

Proceedings Volume 7769, High and Low Concentrator Systems for Solar Electric Applications V; 776909 (2010) https://doi.org/10.1117/12.862914
Event: SPIE Solar Energy + Technology, 2010, San Diego, California, United States

Abstract

Spire Semiconductor has demonstrated a new bi-facial epigrowth manufacturing process for InGaP/GaAs/InGaAs N/P tandem concentrator cells. NREL has verified 5.5 mm cells as 41.4% at 334 suns, AM1.5D, 25°C, matching within measurement error the world record efficiency. A lattice-mismatched 0.94 eV InGaAs cell is epitaxially grown on the backside of a lightly doped, N-type GaAs wafer, the epiwafer is flipped, and 1.42 eV GaAs and 1.89 eV InGaP cells are grown lattice matched on the opposite wafer surface. Cells are then made using only standard III-V process steps. The bi-facial process is an alternative to the inverted metamorphic (IMM) process. It does not use epitaxial liftoff and wafer bonding as in the IMM approach, but does require breaking the growth into two parts and flipping the epiwafer, which we believe is an easier task.

Citation Download Citation

Philip Chiu, Steven Wojtczuk, Xuebing Zhang, Daniel Derkacs, Chris Harris, Daryl Pulver, and Mike Timmons "InGaP/GaAs/InGaAs triple junction concentrators using bi-facial epigrowth", Proc. SPIE 7769, High and Low Concentrator Systems for Solar Electric Applications V, 776909 (24 August 2010); https://doi.org/10.1117/12.862914

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