Effect of the oxide-semiconductor interface on the passivation of hybrid type-II superlattice long-wave infrared photodiodes

Jill A. Nolde; Rory Stine; Eric M. Jackson; Chadwick L. Canedy; Igor Vurgaftman; Serguei I. Maximenko; Chaffra A. Affouda; Maria Gonzalez; Edward H. Aifer; Jerry R. Meyer

doi:10.1117/12.876320

24 January 2011 Effect of the oxide-semiconductor interface on the passivation of hybrid type-II superlattice long-wave infrared photodiodes

Jill A. Nolde, Rory Stine, Eric M. Jackson, Chadwick L. Canedy, Igor Vurgaftman, Serguei I. Maximenko, Chaffra A. Affouda, Maria Gonzalez, Edward H. Aifer, Jerry R. Meyer

Author Affiliations +

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451Y (2011) https://doi.org/10.1117/12.876320
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In order to be commercially viable, the type-II superlattice (T2SL) LWIR focal plane array technology will require the development of effective passivation of exposed surfaces. Here we investigate the relationship between the thickness and composition of the native oxide at the T2SL-SiO₂ interface and the diode performance in terms of sidewall resistivity. Device performance is compared between samples with untreated surfaces, those for which the native oxides have been removed at various intervals prior to SiO₂ deposition, and samples for which oxide growth was promoted by ozone exposure with and without a prior oxide strip. InAs- and GaSb-capped pieces were processed in an identical manner and studied using X-ray photoelectron spectroscopy (XPS). From these spectra, the compositions and thicknesses of the surface oxides just prior to SiO₂ deposition were determined, complementing the electrical characterization of devices. Correlation of the performance and surface composition is presented.

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Jill A. Nolde, Rory Stine, Eric M. Jackson, Chadwick L. Canedy, Igor Vurgaftman, Serguei I. Maximenko, Chaffra A. Affouda, Maria Gonzalez, Edward H. Aifer, and Jerry R. Meyer "Effect of the oxide-semiconductor interface on the passivation of hybrid type-II superlattice long-wave infrared photodiodes", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451Y (24 January 2011); https://doi.org/10.1117/12.876320

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