Recessive self-aligned double patterning with gap-fill technology

Yijian Chen; Xumou Xu; Yongmei Chen; Liyan Miao; Hao Chen; Pokhui Blanco; Chris S. Ngai

doi:10.1117/12.881658

22 March 2011 Recessive self-aligned double patterning with gap-fill technology

Yijian Chen, Xumou Xu, Yongmei Chen, Liyan Miao, Hao Chen, Pokhui Blanco, Chris S. Ngai

Proceedings Volume 7973, Optical Microlithography XXIV; 79731S (2011) https://doi.org/10.1117/12.881658
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In this paper, a recessive self-aligned double patterning (RSADP) process enabled by gap-fill technology is proposed and developed for BEOL applications. FEOL application is also possible by adding gap-fill/CMP steps to reverse the tone of contact/trench patterns. Compared with positive-tone spacer self-aligned double patterning (SADP), RSADP technique can reduce the process complexity by using less masks to pattern 2-D features. With a RSADP process, we successfully demonstrate (half-pitch) 50nm contact and 30nm line/space patterns using dry lithography.

Citation Download Citation

Yijian Chen, Xumou Xu, Yongmei Chen, Liyan Miao, Hao Chen, Pokhui Blanco, and Chris S. Ngai "Recessive self-aligned double patterning with gap-fill technology", Proc. SPIE 7973, Optical Microlithography XXIV, 79731S (22 March 2011); https://doi.org/10.1117/12.881658

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