Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications

G. A. Umana-Membreno; B. Klein; H. Kala; J. Antoszewski; G. Gautam; M. N. Kutty; E. Plis; J. M. Dell; S. Krishna; L. Faraone

doi:10.1117/12.883755

20 May 2011 Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications

G. A. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, J. M. Dell, S. Krishna, L. Faraone

Author Affiliations +

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80120Y (2011) https://doi.org/10.1117/12.883755
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Variable magnetic eld geometrical magnetoresistance mea- surements have been employed to extract the vertical transport parameters, since the Hall-eect technique cannot be employed in the vertical transport conguration. The room-temperature magnetoresistance measurements were performed employing a kelvin-mode set up, at electric elds not exceeding 25 V/cm and at magnetic eld intensities up to 12 T. The measured magnetoresistance, shown to exhibit multiple-carrier conduction charac- teristics, were analyzed using a high-resolution mobility spectrum analysis technique. It is shown that, at room temperature, the electrical conductivity of the sample is due to four distinct carriers, associated with the major- ity carrier holes, sidewall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.

Citation Download Citation

G. A. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, J. M. Dell, S. Krishna, and L. Faraone "Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120Y (20 May 2011); https://doi.org/10.1117/12.883755

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