Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Nima Nader Esfahani; Christopher J. Fredricksen; Gautam Medhi; R. E. Peale; Justin W. Cleary; Walter R. Buchwald; Himanshu Saxena; Oliver J. Edwards

doi:10.1117/12.884005

25 May 2011 Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, R. E. Peale, Justin W. Cleary, Walter R. Buchwald, Himanshu Saxena, Oliver J. Edwards

Author Affiliations +

Proceedings Volume 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense; 80230R (2011) https://doi.org/10.1117/12.884005
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.

Citation Download Citation

Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, R. E. Peale, Justin W. Cleary, Walter R. Buchwald, Himanshu Saxena, and Oliver J. Edwards "Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230R (25 May 2011); https://doi.org/10.1117/12.884005

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