Paper
31 August 2011 InP- and graphene-based grating-gated transistors for tunable THz and mm-wave detection
R. E. Peale, Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, Justin W. Cleary, Joshua Hendrickson, Walter R. Buchwald, Himanshu Saxena, Oliver J. Edwards, Michael S. Lodge, Ben D. Dawson, M. Ishigami
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Abstract
Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency-agile THz imaging spectrometers. We present our calculations of transmission spectra and resonant photoresponse due to plasmons in InPand graphene-based HEMTs at millimeter and THz wavelengths. Our experimental approach to measurement of electrical response is also described. Potential applications include man-portable or space-based spectral-sensing.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. E. Peale, Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, Justin W. Cleary, Joshua Hendrickson, Walter R. Buchwald, Himanshu Saxena, Oliver J. Edwards, Michael S. Lodge, Ben D. Dawson, and M. Ishigami "InP- and graphene-based grating-gated transistors for tunable THz and mm-wave detection", Proc. SPIE 8164, Nanophotonics and Macrophotonics for Space Environments V, 816408 (31 August 2011); https://doi.org/10.1117/12.893833
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KEYWORDS
Graphene

Plasmons

Field effect transistors

Absorption

Terahertz radiation

Transmittance

Plasmonics

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